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NTP18N06L PDF даташит

Спецификация NTP18N06L изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTP18N06L
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTP18N06L Даташит, Описание, Даташиты
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NTP18N06L, NTB18N06L
Power MOSFET
15 Amps, 60 Volts,
Logic Level
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 mW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp v 10 ms)
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tp v 10 ms)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
60
60
"10
"20
Vdc
Vdc
Vdc
ID 15 Adc
ID 8.0 Adc
IDM 45 Apk
PD 48.4 Watts
0.32 W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55 to °C
+175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 60 Vdc,
IL(pk) = 11 A, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
TL
61 mJ
°C/W
3.1
72.5
260 °C
© Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 3
1
http://onsemi.com
15 AMPERES
60 VOLTS
RDS(on) = 100 mW
N−Channel
D
G
S
1
2
3
4
TO−220AB
CASE 221A
STYLE 5
4
12
3
D2PAK
CASE 418AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx18N06L
LLYWW
NTx18N06L
LLYWW
1
Gate
3
Source
12 3
Gate Drain Source
2
Drain
NTx18N06L = Device Code
x = B or P
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
Publication Order Number:
NTP18N06L/D









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NTP18N06L Даташит, Описание, Даташиты
NTP18N06L, NTB18N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 60 Vdc)
(VGS = 0 Vdc, VDS = 60 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 5.0 Vdc, ID = 7.5 Adc)
Static Drain−to−Source On−Voltage (Note 1)
(VGS = 5.0 Vdc, ID = 15 Adc)
(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150°C)
Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 1)
Gate Charge
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward On−Voltage
(IS = 15 Adc, VGS = 0 Vdc) (Note 1)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 1)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qt
Q1
Q2
VSD
trr
ta
tb
QRR
Min Typ Max Unit
60 70
− 63.2
Vdc
− mV/°C
mAdc
− − 1.0
− − 10
− − ± 100 nAdc
Vdc
1.0 1.6 2.0
− 4.2 − mV/°C
mW
− 85 100
Vdc
− 1.46 1.8
− 1.2 −
− 9.4 − mhos
310 440
pF
− 106 150
− 37 70
− 11 20 ns
− 121 210
− 11 40
− 42 80
− 7.3 20 nC
− 1.9 −
− 4.3 −
− 0.96 1.2 Vdc
− 0.83 −
− 35 − ns
− 23 −
− 12 −
− 0.043 −
mC
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NTP18N06L Даташит, Описание, Даташиты
NTP18N06L, NTB18N06L
32
VGS = 10 V
6V
8V
24
5V
4.5 V
16
4V
8 3.5 V
3V
0
02468
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
32
VDS 10 V
24
16
8 TJ = 25°C
TJ = 100°C
TJ = −55°C
0
12 3 45
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
7
0.32
VGS = 5 V
0.24
0.16
0.08
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0 8 16 24
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.32
VGS = 10 V
0.24
0.16
TJ = 100°C
0.08
TJ = 25°C
0
32 0
TJ = −55°C
8 16 24
ID, DRAIN CURRENT (AMPS)
32
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 7.5 A
1.8 VGS = 5 V
1.6
10,000
VGS = 0 V
1000
TJ = 150°C
1.4
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
TJ = 100°C
10
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3










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