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6N1135 PDF даташит

Спецификация 6N1135 изготовлена ​​​​«Vishay Siliconix» и имеет функцию, называемую «(6N1135 / 6N1136) High Speed Optocoupler».

Детали детали

Номер произв 6N1135
Описание (6N1135 / 6N1136) High Speed Optocoupler
Производители Vishay Siliconix
логотип Vishay Siliconix логотип 

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6N1135 Даташит, Описание, Даташиты
www.DataSheet4U.com
6N1135/ 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
• Isolation Test Voltage: 5300 VRMS
• TTL Compatible
• High Bit Rates: 1.0 MBd
• Bandwidth 2.0 MHz
• Open-Collector Output
• External Base Wiring Possible
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
NC 1
A2
C3
NC 4
8 C (VCC)
7 B (VB)
6 C (VO)
5 E (GND)
e3 Pbi179081
Pb-free
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Description
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Order Information
Part
6N1135
6N1136
6N1135-X007
6N1136-X006
6N1136-X007
6N1136-X009
Remarks
CTR 7 %, DIP-8
CTR 19 %, DIP-8
CTR 7 %, SMD-8 (option 7)
CTR 19 %, DIP-8 400 mil (option 6)
CTR 19 %, SMD-8 (option 7)
CTR 19 %, SMD-8 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltages
Test condition
Forward current
Peak forward current
t = 1.0 ms, duty cycle 50 %
Maximum surge forward current t 1.0 µs, 300 pulses/s
Thermal resistance
Power dissipation
Tamb = 70 °C
Symbol
VR
IF
IFM
IFSM
Rth
Pdiss
Value
5.0
25
50
1.0
700
45
Unit
V
mA
mA
A
K/W
mW
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
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6N1135 Даташит, Описание, Даташиты
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Vishay Semiconductors
Output
Parameter
Supply voltage
Output voltage
Emitter-base voltage
Output current
Maximum output current
Base current
Thermal resistance
Power dissipation
Test condition
Tamb = 70 °C
Coupler
Parameter
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, NOV 74
Storage temperature range
Test condition
t = 1.0 s
Ambient temperature range
Soldering temperature
max. 10 s, dip soldering
0.5 mm from case bottom
Symbol
VCC
VO
VEBO
IO
IB
Pdiss
Symbol
VISO
Tstg
Tamb
Tsld
Value
- 0.5 to 15
- 0.5 to 15
5.0
8.0
16
5.0
300
100
Value
5300
- 55 to + 125
- 55 to + 110
260
Unit
V
V
V
mA
mA
mA
K/W
mW
Unit
VRMS
°C
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 16 mA
VF
1.6 1.9
V
Breakdown voltage
IR = 10 µA
VBR 5.0
V
Reverse current
VR = 5.0 V
IR
0.5 10 µA
Capacitance
VR = 0 V, f = 1.0 MHz
CI
125
pF
Temperature coefficient, forward voltage IF = 16 mA
VF/TA
-1.7
mV/°C
Output
Parameter
Test condition
Part Symbol Min Typ. Max Unit
Logic low supply current
IF = 16 mA, VO open, VCC = 15 V
ICCL
150
µA
Supply current, logic high
IF = 0 mA, VO open, VCC = 15 V
ICCH
0.01 1
µA
Output voltage, output low
IF = 16 mA, VCC = 4.5 V,
IO = 1.1 mA
6N1135
VOL
0.1 0.4
V
IF = 16 mA, VCC = 4.5 V,
IO = 2.4 mA
6N1136
VOL
0.1 0.4
V
Output current, output high
IF = 0 mA, VO = VCC = 5.5 V
IOH
3.0 500 nA
IF = 0 mA, VO = VCC = 15 V
IOH
0.01 1
µA
www.vishay.com
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Document Number 83909
Rev. 1.5, 26-Oct-04









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6N1135 Даташит, Описание, Даташиты
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Coupler
Parameter
Capacitance (input-output)
Current Transfer Ratio
6N1135/ 6N1136
Vishay Semiconductors
Test condition
Part Symbol Min Typ. Max Unit
f = 1.0 MHz
CIO 0.6 pF
IF = 16 mA, VO = 0.4 6N1135
V, VCC = 4.5 V
CTR
7
16
%
6N1136 CTR
19
35
%
IF = 16 mA, VO = 0.5 6N1135
V, VCC = 4.5 V
CTR
5
%
6N1136 CTR
15
%
Switching Characteristics
Parameter
High-low
Low-high
Test condition
IF = 16 mA, VCC = 5.0 V, RL = 4.1 k
IF = 16 mA, VCC = 5.0 V, RL = 1.9 k
IF = 16 mA, VCC = 5.0 V, RL = 4.1 k
IF = 16 mA, VCC = 5.0 V, RL = 1.9 k
Part Symbol Min Typ. Max Unit
6N1135
tPHL
0.3 1.5 µs
6N1136
tPHL
0.2 0.8 µs
6N1135
tPLH
0.3 1.5 µs
6N1136
tPLH
0.2 0.8 µs
Pulse generator
ZO=50
tr,tf=5 ns
duty cycle 10%
t100 µs
i6n135_01
IF
IF Monitor
1
2
3
100 ı 4
IF
8 5V
7 RL
6 VO
5 CL
15 pF
VO
VOL
tPHL
Figure 1. Switching Times
t
5V
1.5 V
tPLH
t
Common Mode Transient Immunity
Parameter
Test condition
Part Symbol Min Typ. Max Unit
High
IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 k6N1135 | CMH |
1000
V/µs
IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 k6N1136 | CMH |
1000
V/µs
Low IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 k6N1135 | CML |
1000
V/µs
IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 k6N1136 | CML |
1000
V/µs
Document Number 83909
Rev. 1.5, 26-Oct-04
www.vishay.com
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Номер в каталогеОписаниеПроизводители
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