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W7NA80 Datasheet Download - STMicroelectronics

Номер произв W7NA80
Описание STW7NA80
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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W7NA80 Даташит, Описание, Даташиты
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STW7NA80
® STH7NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW 7NA80
S TH7NA 80F I
V DSS
800 V
800 V
RDS(on)
< 1.9
< 1.9
ID
6.5 A
4A
s TYPICAL RDS(on) = 1.68
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Pa ram et er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS G ate-source Volt age
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ()
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
October 1998
Valu e
ST W7NA80 STH7NA80FI
8 00
8 00
± 30
6.5 4
4 2.5
26 26
150 60
1.2 0.48
4000
-65 to 150
1 50
Unit
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10







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W7NA80 Даташит, Описание, Даташиты
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STW7NA80-STH7NA80FI
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
T O - 247
0.83
ISOWATT 218
2. 08
30
0. 1
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
6. 3
320
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
25
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 3. 5 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2.25
Typ.
3
1.68
Max.
3.75
1.9
Unit
V
7A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 3.5 A
Min.
4.5
Typ.
6.3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1330
160
40
1750
210
55
pF
pF
pF
2/10







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W7NA80 Даташит, Описание, Даташиты
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STW7NA80-STH7NA80FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Qg
Qgs
Qgd
P ar am et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 400 V ID = 3.5 A
RG = 47
VGS = 10 V
(see test circuit, figure 3)
VDD = 640 V ID = 7 A
RG = 47
VGS = 10 V
(see test circuit, figure 5)
VDD = 640 V ID = 7 A VGS = 10 V
Min.
Typ.
3.5
9.5
Max.
45
125
170
58 78
8
27
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 6 A
RG = 47 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
90
25
125
Max.
120
35
165
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 7 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 7 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
6.5
26
Unit
A
A
1.6
850
15
35
V
ns
µC
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/10










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