H6968CS PDF даташит
Спецификация H6968CS изготовлена «Hi-Sincerity Mocroelectronics» и имеет функцию, называемую «Dual N-Channel Enhancement-Mode MOSFET». |
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Детали детали
Номер произв | H6968CS |
Описание | Dual N-Channel Enhancement-Mode MOSFET |
Производители | Hi-Sincerity Mocroelectronics |
логотип |
4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H6968S / H6968CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) • 8-Lead Plastic SO-8
(Battery Switch, ESD Protected)
Package Code: S
Features
• RDS(on)=32mΩ@VGS=2.5V, ID=5.5A
• RDS(on)=24mΩ@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6.5
30
2
1.3
-55 to +150
62.5
Pin Assignment & Internal Schematic Diagram
Part No.
H6968S
Pin Assignment
S2 1
G2 2
8 D2
7 D2
S1 3
G1 4
6 D1
5 D1
Top View
Internal Schematic Diagram
D1
G1 G2
S1
D
H6968CS
S2 1
G2 2
S1 3
G1 4
8D
7D
6D
5D
G1
G2
Top View
S1
D2
S2
D
S2
Units
V
V
A
A
W
W
°C
°C/W
H6968S, H6968CS
HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
• Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
• Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-off Delay Time
tf Turn-off Fall Time
• Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS=0V, ID=250uA
VGS=2.5V, ID=5.5A
VGS=4.5V, ID=6.5A
VDS=VGS, ID=250uA
VDS=16V, VGS=0V
VGS=±4.5V, VDS=0V
VDS=10V, ID=6.5A
VDS=10V, ID=6A, VGS=4.5V
VDS=10V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
RGEN=6Ω
VGS=0V, IS=1.5A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
Min. Typ. Max. Unit
20 - - V
- 24 32
mΩ
- 20 24
0.6 - 1.6 V
- - 1 uA
- - ±200 nA
- 30 -
S
-9-
- 2.4 -
- 3.6 -
- 476 -
- 65.1 -
- 49 -
- 50 -
- 100 -
- 500 -
- 200 -
nC
pF
ns
- - 1.7 A
- 0.61 1.2 V
VGEN
Switching
Test Circuit
VDD
RD
VIN D
VOUT
RG
G
S
td(on)
ton Switching
Waveforms
tr
90%
td(off)
toff
tf
90%
Output, VOUT
10%
Input, VIN
10%
50%
10%
Inverted
90%
50%
Pulse Width
H6968S, H6968CS
HSMC Product Specification
No Preview Available ! |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
SO-8 Dimension
AG
8 76 5
BC
Pin1 Index
23 4
I
H
D
E
Part A
F
J
K
Part A L
M
N
O
8-Lead SO-8 Plastic
Surface Mounted Package
HSMC Package Code: S
H6968S Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
6968
Pin 1 Index
Date Code
S
Control Code
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
H6968CS Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
6 9 6 8C
Pin 1 Index
Date Code
S
Control Code
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Note: Green label is used for pb-free packing
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 4.85 5.10
B 3.85 3.95
C 5.80 6.20
D 1.22 1.32
E 0.37 0.47
F 3.74 3.88
G 1.45 1.65
H 4.80 5.10
I 0.05 0.20
J 0.30 0.70
K 0.19 0.25
L 0.37 0.52
M 0.23 0.28
N 0.08 0.13
O 0.00 0.15
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H6968S, H6968CS
HSMC Product Specification
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H6968CS | Dual N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |
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