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H6968CS PDF даташит

Спецификация H6968CS изготовлена ​​​​«Hi-Sincerity Mocroelectronics» и имеет функцию, называемую «Dual N-Channel Enhancement-Mode MOSFET».

Детали детали

Номер произв H6968CS
Описание Dual N-Channel Enhancement-Mode MOSFET
Производители Hi-Sincerity Mocroelectronics
логотип Hi-Sincerity Mocroelectronics логотип 

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H6968CS Даташит, Описание, Даташиты
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H6968S / H6968CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) 8-Lead Plastic SO-8
(Battery Switch, ESD Protected)
Package Code: S
Features
RDS(on)=32m@VGS=2.5V, ID=5.5A
RDS(on)=24m@VGS=4.5V, ID=6.5A
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Li ion Battery Packs Use
Designed for Battery Switch Appliactions
ESD Protected
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6.5
30
2
1.3
-55 to +150
62.5
Pin Assignment & Internal Schematic Diagram
Part No.
H6968S
Pin Assignment
S2 1
G2 2
8 D2
7 D2
S1 3
G1 4
6 D1
5 D1
Top View
Internal Schematic Diagram
D1
G1 G2
S1
D
H6968CS
S2 1
G2 2
S1 3
G1 4
8D
7D
6D
5D
G1
G2
Top View
S1
D2
S2
D
S2
Units
V
V
A
A
W
W
°C
°C/W
H6968S, H6968CS
HSMC Product Specification









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H6968CS Даташит, Описание, Даташиты
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-off Delay Time
tf Turn-off Fall Time
Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS=0V, ID=250uA
VGS=2.5V, ID=5.5A
VGS=4.5V, ID=6.5A
VDS=VGS, ID=250uA
VDS=16V, VGS=0V
VGS=±4.5V, VDS=0V
VDS=10V, ID=6.5A
VDS=10V, ID=6A, VGS=4.5V
VDS=10V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
RGEN=6
VGS=0V, IS=1.5A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
Min. Typ. Max. Unit
20 - - V
- 24 32
m
- 20 24
0.6 - 1.6 V
- - 1 uA
- - ±200 nA
- 30 -
S
-9-
- 2.4 -
- 3.6 -
- 476 -
- 65.1 -
- 49 -
- 50 -
- 100 -
- 500 -
- 200 -
nC
pF
ns
- - 1.7 A
- 0.61 1.2 V
VGEN
Switching
Test Circuit
VDD
RD
VIN D
VOUT
RG
G
S
td(on)
ton Switching
Waveforms
tr
90%
td(off)
toff
tf
90%
Output, VOUT
10%
Input, VIN
10%
50%
10%
Inverted
90%
50%
Pulse Width
H6968S, H6968CS
HSMC Product Specification









No Preview Available !

H6968CS Даташит, Описание, Даташиты
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
SO-8 Dimension
AG
8 76 5
BC
Pin1 Index
23 4
I
H
D
E
Part A
F
J
K
Part A L
M
N
O
8-Lead SO-8 Plastic
Surface Mounted Package
HSMC Package Code: S
H6968S Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
6968
Pin 1 Index
Date Code
S
Control Code
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
H6968CS Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
6 9 6 8C
Pin 1 Index
Date Code
S
Control Code
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Note: Green label is used for pb-free packing
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 4.85 5.10
B 3.85 3.95
C 5.80 6.20
D 1.22 1.32
E 0.37 0.47
F 3.74 3.88
G 1.45 1.65
H 4.80 5.10
I 0.05 0.20
J 0.30 0.70
K 0.19 0.25
L 0.37 0.52
M 0.23 0.28
N 0.08 0.13
O 0.00 0.15
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H6968S, H6968CS
HSMC Product Specification










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