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C945P PDF даташит

Спецификация C945P изготовлена ​​​​«NEC» и имеет функцию, называемую «2PC945P».

Детали детали

Номер произв C945P
Описание 2PC945P
Производители NEC
логотип NEC логотип 

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C945P Даташит, Описание, Даташиты
DATA SHEET
NPN SILICON TRANSISTOR
2SC945
NPN SILICON TRANSISTOR
DESCRIPTION
The 2SC945 is designed for use in driver stage of AF amplifier and
low speed switching.
FEATURES
High voltage
LVCEO = 50 V MIN.
Excellent hFE linearity
hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
Maximum Power Dissipation (TA = 25°C)
Total Power Dissipation
55 to +150°C
+150°C Maximum
250 mW
Maximum Voltages and Currents (TA = 25°C)
VCBO Collector to Base Voltage
VCEO Collector to Emitter Voltage
VEBO Emitter to Base Voltage
IC Collector Current
IB Base Current
60 V
50 V
5.0 V
100 mA
20 mA
PACKAGE DRAWING (Unit: mm)
φ 5.2 MAX.
0.5
1.27
2.54
123
1. Emitter
2. Collector
3. Base
EIAJ:
JEDEC:
IEC:
SC43B
TO92
PA33
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
Gain Bandwidth Product
Collector to Base Capacitance
Collector Cutoff Current
Emitter Cutoff Current
Base to Emitter Voltage
Collector Saturation Voltage
Base Saturation Voltage
SYMBOL
hFE1
hFE2
fT
Cob
ICBO
IEBO
VBE
VCE(sat)
VBE(sat)
TEST CONDITIONS
VCE = 6.0 V, IC = 0.1 mA
VCE = 6.0 V, IC = 1.0 mA
VCE = 6.0 V, IE = 10 mA
VCB = 6.0 V, IE = 0, f = 1.0 MHz
VCB = 60 V, IE = 0 A
VEB = 5.0 V, IC = 0 A
VCE = 6.0 V, IC = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 100 mA, IB = 10 mA
MIN.
50
90
0.55
TYP.
185
200
250
3.0
0.62
0.15
0.86
MAX.
600
100
100
0.65
0.3
1.0
UNIT
MHz
pF
nA
nA
V
V
V
CLASSIFICATION OF hFE2
Rank
Range
R
90 to 180
Q
135 to 270
P
200 to 400
Remark hFE2 Test Conditions: VCE = 6.0 V, IC = 1.0 mA
K
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17117EJ2V0DS00 (2nd edition)
(Previous No. TC-3005C)
Date Published March 2004 N CP(K)
Printed in Japan
The mark shows major revised points.
c
2004









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C945P Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.)
2SC945
TA
VCE
VCE = 6.0 V
VBE
2
VCETA
IB = 0.1 mA
VCE = 6.0 V
IC
VCE
IB = 0.1 mA
TA = 75°C
25°C
25°C
VCE = 6.0 V
IC
VBE(sat)
VCE(sat)
IC = 10 A  IB
IC = 10 A  IB
IC
VCE =10 V
IE
Data Sheet D17117EJ2V0DS









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C945P Даташит, Описание, Даташиты
2SC945
Cib(IC = 0 A)
Cob(IE = 0 A)
VEB
VCB
hie
hre
hfe
hoe
IC
VCE = 6.0 V
f = 1.0 kHz
He
he(IC)
he(IC = 1.0 mA)
hoe
hfe
hre
hie
VCE = 6.0 V
IC = 1.0 mA
VCE = 6.0 V
IC = 1.0 mA
hoe 
hre 
hie 
hFE
hoe
hre
hfe, hie
VCE
IC = 1.0 mA
He
he(VCE)
he(VCE = 6.0 V)
hfe, hie
hre hoe
hfe 
En In
VCE = 6.0 V
RG RG
in
en
IC
Data Sheet D17117EJ2V0DS
3










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