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PDF 9960GM Data sheet ( Hoja de datos )
| Número de pieza | 9960GM | |
| Descripción | SSM9960GM | |
| Fabricantes | Silicon Standard | |
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SSM9960M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Lower gate charge
Fast switching characteristics
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV DSS
R DS(ON)
ID
40V
20mΩ
7.8A
D1
G1 G2
D2
The SSM9960M is in the SO-8 package, which is widely preferred for
S1 S2
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=100°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
± 20
7.8
6.2
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
62.5
Unit
°C/W
8/21/2004 Rev.2.01
www.SiliconStandard.com
1 of 6
1 page  
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SSM9960M/GM
12
I D =7.0A
9
6
VDS =12V
VDS =16V
VDS =20V
3
10000
1000
100
f=1.0MHz
Ciss
Coss
Crss
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10
1
7 13 19 25 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
Tj=150 o C
1
Tj=25 o C
0.1
0.01
0
0.4 0.8
V SD (V)
1.2
Fig 11. Forward Characteristic of
Reverse Diode
3.5
3
2.5
2
1.5
1
0.5
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
8/21/2004 Rev.2.01
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 9960GM.PDF ] | |
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