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W80NF55-08 Datasheet Download - STMicroelectronics

Номер произв W80NF55-08
Описание STW80NF55-08
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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W80NF55-08 Даташит, Описание, Даташиты
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STW80NF55-08
N-CHANNEL 55V - 0.0065- 80A TO-247
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STW80NF55-08
55 V < 0.008
s TYPICAL RDS(on) = 0.0065
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s DC-AC & DC-DC CONVERTERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID (*)
Drain Current (continuous) at TC = 25°C
ID
IDM (l)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
55
55
±20
80
80
320
300
2
870
–65 to 175
175
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Current Limited by wire bonding
September 2002
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
1/8







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W80NF55-08 Даташит, Описание, Даташиты
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STW80NF55-08
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
55
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 40 A
Min.
2
Typ.
3
0.0065
Max.
4
0.008
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > 2.5 V, ID =18 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
20
3850
800
250
Max.
Unit
S
pF
pF
pF
2/8







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W80NF55-08 Даташит, Описание, Даташиты
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 27V, ID = 40A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 80V, ID = 80A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 27V, ID = 40A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Vclamp =44V, ID =80A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 80A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STW80NF55-08
Min.
Typ.
25
85
115
24
46
Max.
150
Unit
ns
ns
nC
nC
nC
Min.
Typ.
70
25
Max.
Unit
ns
ns
85 ns
75 ns
110 ns
Min.
Typ.
80
250
6.4
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8










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