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NT5SV16M16BT PDF даташит

Спецификация NT5SV16M16BT изготовлена ​​​​«Nanya Technology» и имеет функцию, называемую «(NT5SVxxMxxBx) 256Mb SDRAM».

Детали детали

Номер произв NT5SV16M16BT
Описание (NT5SVxxMxxBx) 256Mb SDRAM
Производители Nanya Technology
логотип Nanya Technology логотип 

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NT5SV16M16BT Даташит, Описание, Даташиты
www.DataSheet4U.com
NT5SV64M4BS / NT5SV64M4BT
NT5SV32M8BS / NT5SV32M8BT
NT5SV16M16BS / NT5SV16M16BT
256Mb Synchronous DRAM
Features
High Performance:
fCK Clock Frequency
tCK Clock Cycle
tAC Clock Access Time1
tAC Clock Access Time2
6K
CL=3
75B
CL=3
Units
166 133 MHz
6 7.5 ns
— — ns
5 5.4 ns
1. Terminated load. See AC Characteristics on page 37
2. Unterminated load. See AC Characteristics on page
37
3. tRP = tRCD = 2 CKs
• Single Pulsed RAS Interface
• Fully Synchronous to Positive Clock Edge
• Four Banks controlled by BA0/BA1 (Bank Select)
• Programmable CAS Latency: 2, 3
• Programmable Burst Length: 1, 2, 4, 8
• Programmable Wrap: Sequential or Interleave
• Multiple Burst Read with Single Write Option
• Automatic and Controlled Precharge Command
• Data Mask for Read/Write control (x4, x8)
• Dual Data Mask for byte control (x16)
• Auto Refresh (CBR) and Self Refresh
• Suspend Mode and Power Down Mode
• Standard Power operation
• 8192 refresh cycles/64ms
• Random Column Address every CK (1-N Rule)
• Single 3.3V ± 0.3V Power Supply
• LVTTL compatible
• Package: 54-pin 400 mil TSOP-Type II
• Lead-free & Halogen-free product available
Description
The NT5SV64M4BS, NT5SV64M4BT, NT5SV32M8BS,
NT5SV32M8BT, NT5SV16M16BS, and NT5SV16M16BT are
four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O
x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4
Bank, respectively. These synchronous devices achieve
high-speed data transfer rates of up to 166MHz by employing
a pipeline chip architecture that synchronizes the output data
to a system clock.
The device is designed to comply with all JEDEC standards
set for synchronous DRAM products, both electrically and
mechanically. All of the control, address, and data input/out-
put (I/O or DQ) circuits are synchronized with the positive
edge of an externally supplied clock.
RAS, CAS, WE, and CS are pulsed signals which are exam-
ined at the positive edge of each externally applied clock
(CK). Internal chip operating modes are defined by combina-
tions of these signals and a command decoder initiates the
necessary timings for each operation. A fifteen bit address
bus accepts address data in the conventional RAS/CAS mul-
tiplexing style. Thirteen row addresses (A0-A12) and two
bank select addresses (BA0, BA1) are strobed with RAS.
Eleven column addresses (A0-A9, A11) plus bank select
addresses and A10 are strobed with CAS. Column address
A11 is dropped on the x8 device, and column addresses A11
and A9 are dropped on the x16 device.
Prior to any access operation, the CAS latency, burst length,
and burst sequence must be programmed into the device by
address inputs A0-A12, BA0, BA1 during a mode register set
cycle. In addition, it is possible to program a multiple burst
sequence with single write cycle for write through cache
operation.
Operating the four memory banks in an interleave fashion
allows random access operation to occur at a higher rate
than is possible with standard DRAMs. A sequential and gap-
less data rate of up to 166MHz is possible depending on
burst length, CAS latency, and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are sup-
ported.
REV 1.4
Oct 2006
1
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.









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NT5SV16M16BT Даташит, Описание, Даташиты
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NT5SV64M4BS / NT5SV64M4BT
NT5SV32M8BS / NT5SV32M8BT
NT5SV16M16BS / NT5SV16M16BT
256Mb Synchronous DRAM
Ordering Information
Organization
Part Number
64M x 4
NT5SV64M4BS-6K
32M x 8
NT5SV32M8BS-6K
16M x 16
NT5SV16M16BS-6K
64M x 4
NT5SV64M4BT-6K
32M x 8
NT5SV32M8BT-6K
16M x 16
NT5SV16M16BT-6K
64M x 4
NT5SV64M4BS-75B
32M x 8
NT5SV32M8BS-75B
16M x 16
NT5SV16M16BS-75B
64M x 4
NT5SV64M4BT-75B
32M x 8
NT5SV32M8BT-75B
16M x 16
NT5SV16M16BT-75B
CL = CAS Latency
Lead-free products are also halogen-free
Speed Grade
Clock Frequency
CL-tRCD-tRP
166MHz-3-3-3
Note
PC166
166MHz-3-3-3
PC166
166MHz-3-3-3
PC166
166MHz-3-3-3
PC166
166MHz-3-3-3
PC166
166MHz-3-3-3
PC166
133MHz-3-3-3
PC133
133MHz-3-3-3
PC133
133MHz-3-3-3
PC133
133MHz-3-3-3
PC133
133MHz-3-3-3
PC133
133MHz-3-3-3
PC133
Package
Power
400mil
54-PIN
TSOP II
Lead-Free
400mil
54-PIN
TSOP II
400mil
54-PIN
TSOP II
Lead-Free
400mil
54-PIN
TSOP II
3.3V
3.3V
3.3V
3.3V
Nanya Technology Corporation
Hwa Ya Technology Park 669
Fu Hsing 3rd Rd., Kueishan,
Taoyuan, 333, Taiwan, R.O.C.
Tel: +886-3-328-1688
Please visit our home page for more information: www.nanya.com
REV 1.4
Oct 2006
2
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.









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NT5SV16M16BT Даташит, Описание, Даташиты
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NT5SV64M4BS / NT5SV64M4BT
NT5SV32M8BS / NT5SV32M8BT
NT5SV16M16BS / NT5SV16M16BT
256Mb Synchronous DRAM
Pin Assignments for Planar Components (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
VDD
NC
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
VDD
NC
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 VSS
53 NC
52 VSSQ
51 NC
50 DQ3
49 VDDQ
48 NC
47 NC
46 VSSQ
45 NC
44 DQ2
43 VDDQ
42 NC
41 VSS
40 NC
39 DQM
38 CK
37 CKE
36 A12
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
54-pin Plastic TSOP(II) 400 mil
16Mbit x 4 I/O x 4 Bank
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
VSS
NC
DQM
CK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
8Mbit x 8 I/O x 4 Bank
4Mbit x 16 I/O x 4 Bank
REV 1.4
Oct 2006
3
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.










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Номер в каталогеОписаниеПроизводители
NT5SV16M16BS(NT5SVxxMxxBx) 256Mb SDRAMNanya Technology
Nanya Technology
NT5SV16M16BT(NT5SVxxMxxBx) 256Mb SDRAMNanya Technology
Nanya Technology

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