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Datasheet NDS7002A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NDS7002A | N-CHANNEL MOSFET NDS7002A
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current.
用途 / Appli |  BLUE ROCKET ELECTRONICS | mosfet |
| 2 | NDS7002A | N-Channel Enhancement Mode Field Effect Transistor 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
August 2016
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • |  Fairchild | transistor |
| 3 | NDS7002A | (NDS7000A / NDS7002A) N-Channel Enhancement Mode Field Effect Transistor
2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
March 1993
2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
General Description
These n-channel enhancement mode field effect transistors are produced using Nat |  National Semiconductor | transistor |
NDS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NDS02ZG-M6 | NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
Product Specifications Nov 2001
Features
• • • • • • • • • • • Single board design 8.2 mm height profile Input/output isolation: 1500 Vdc Low conducted and radiated EMI Excellent co-p  Power-One converter | | |
| 2 | NDS03ZA | NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
Product Specifications Nov 2001
Features
• • • • • • • • • • • Single board design 8.2 mm height profile Input/output isolation: 1500 Vdc Low conducted and radiated EMI Excellent co-p Power-One converter | | |
| 3 | NDS03ZA-M6 | NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
Product Specifications Nov 2001
Features
• • • • • • • • • • • Single board design 8.2 mm height profile Input/output isolation: 1500 Vdc Low conducted and radiated EMI Excellent co-p Power-One converter | | |
| 4 | NDS03ZB-M6 | NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
Product Specifications Nov 2001
Features
• • • • • • • • • • • Single board design 8.2 mm height profile Input/output isolation: 1500 Vdc Low conducted and radiated EMI Excellent co-p Power-One converter | | |
| 5 | NDS03ZD-M6 | NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
Product Specifications Nov 2001
Features
• • • • • • • • • • • Single board design 8.2 mm height profile Input/output isolation: 1500 Vdc Low conducted and radiated EMI Excellent co-p Power-One converter | | |
| 6 | NDS03ZE-M6 | NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
Product Specifications Nov 2001
Features
• • • • • • • • • • • Single board design 8.2 mm height profile Input/output isolation: 1500 Vdc Low conducted and radiated EMI Excellent co-p Power-One converter | | |
| 7 | NDS0605 | P-Channel Enhancement Mode Field Effect Transistor NDS0605
July 2002
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize Fairchild transistor | |
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| Número de pieza | Descripción | Fabricantes | |
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