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2SB968 PDF даташит

Спецификация 2SB968 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «For Low-Frequency Output Amplification».

Детали детали

Номер произв 2SB968
Описание For Low-Frequency Output Amplification
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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2SB968 Даташит, Описание, Даташиты
Power Transistors
2SB0968 (2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
Features
Possible to solder radiation fin directly to printed circuit board
High collector-emitter voltage (Base open) VCEO
Large collector power dissipation PC
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
www.DCaotlaleSchtoere-et4mUit.tceormvoltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation (TC = 25°C)
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
10
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
1.0±0.1
2
0.1±0.05
0.5±0.1
1 3 0.75±0.1
2.3±0.1
4.6±0.1
(5.3)
(4.35)
(3.0)
12
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
3
Note) Self-supported type package is also prepared.
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = −1 mA, IE = 0
IC = −2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −1 mA
IC = −1.5 A, IB = − 0.15 A
IC = −2 A, IB = − 0.2 A
VCE = −5 V, IC = − 0.5 A, f = 200 MHz
VCB = −20 V, IE = 0, f = 1 MHz
Min
50
40
80
10
Typ Max
1
100
10
220
1
1.5
150
45
Unit
V
V
µA
µA
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE1
Q
80 to 160
R
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2003
SJD00035AED
1









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2SB968 Даташит, Описание, Даташиты
2SB0968
PC Ta
16
TC=Ta
12
8
4
0
0 40 80 120 160
Ambient temperature Ta (°C)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IC VCE
TC=25˚C
IB=–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE(sat) IC
IC/IB=10
10
1
0.1
25˚C
TC=100˚C
–25˚C
0.01
0.01
0.1
1
Collector current IC (A)
VBE(sat) IC
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10
IC/IB=10
1 000
1
0.1
TC=–25˚C
100˚C
25˚C
100
10
hFE IC
VCE=–5V
TC=100˚C 25˚C
–25˚C
0.01
0.01
0.1
1
Collector current IC (A)
1
0.01
0.1
1
Collector current IC (A)
fT IE
240
VCB=–5V
f=200MHz
TC=25˚C
200
160
120
80
40
0
10 102 103 104
Emitter current IE (mA)
Cob VCB
140 IE=0
f=1MHz
TC=25˚C
120
100
80
60
40
20
0
1 10 100
Collector-base voltage VCB (V)
120
100
VCER RBE
TC=25˚C
80
60
40
20
0
0.001 0.01
0.1
1
10
Base-emitter resistance RBE (k)
1 000
ICEO Ta
VCE=–12V
100
10
1
0 20 40 60 80 100 120
Ambient temperature Ta (°C)
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2SB968 Даташит, Описание, Даташиты
Safe operation area
10
ICP
Single pulse
TC=25˚C
1 IC
t=1ms
0.1
t=1s
0.01
0.001
0.1
1
10 100
Collector-emitter voltage VCE (V)
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2SB0968
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