|
|
Datasheet SD1224 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SD1224 | RF & MICROWAVE TRANSISTORS SD1224
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W . Microsemi . COM
The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes b |  Microsemi Corporation | transistor |
| 2 | SD1224 | RF AND MICROWAVE TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
SD1224
RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features
• 28 VOLTS
•
175 MHz CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN
• • • • � |  Advanced Power Technology | transistor |
| 3 | SD1224-10 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS SD1224-10
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
. . . . . .
30 MHz 28 VOLTS IMD − 28 dB COMMON EMITTER GOLD METALLIZATION POUT = 30 W MIN. WITH 18 dB GAIN
.380 4LFL (M113) epoxy sealed ORDER CODE SD1224-10
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor de |  ST Microelectronics | transistor |
| 4 | SD1224-10 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
| Microsemi Corporation | transistor |
| 5 | SD1224-2 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
| Microsemi Corporation | transistor |
SD1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SD10-xxx | (SD Series) High Power Density / Low Profile / Shielded Inductors
®
SD Series High Power Density, Low Profile, Shielded Inductors
Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite  Cooper Electronic Technologies inductor | | |
| 2 | SD10-xxx | High Power Density
®
SD Series High Power Density, Low Profile, Shielded Inductors
Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite  Cooper Electronic data | | |
| 3 | SD1002 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar  Taiwan Semiconductor rectifier | | |
| 4 | SD1003 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor rectifier | | |
| 5 | SD1003 | Step-Down Converter SD1003
1200mA, 30V Synchronous Rectified Step-Down Converter
FEATURES
8V to 30V operating input range 1200mA output current Up to 92% efficiency High efficiency (>80%) at light load Internal Soft-Start 400kHz switching frequency CC/CV control mode Input under voltag  ETC converter | | |
| 6 | SD1004 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor rectifier | | |
| 7 | SD1006 | 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor rectifier | |
| Esta página es del resultado de búsqueda del SD1224. Si pulsa el resultado de búsqueda de SD1224 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |