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Datasheet S9013 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S9013 | PNP Transistor S9013 TRANSISTOR (NPN)
FEATURE z Complementary to S9012 z Excellent hFE linearity MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Ju |  Koo Chin | transistor |
| 2 | S9013 | 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. SS9013
SS9013
1W Output Amplifier of Potable Radios in Class B Push-pull Operation.
• • • • High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transisto |  Fairchild Semiconductor | amplifier |
| 3 | S9013 | NPN Silicon Transistor Semiconductor
STS9013
NPN Silicon Transistor
Descriptions
• General purpose application. • Switching application.
Features
• Excellent hFE linearity. • Complementary pair with STS9012
Ordering Information
Type NO. STS9013 Marking STS9013 Package Code TO-92
Outline Dimensions
3.45±0.1 4 |  AUK corp | transistor |
| 4 | S9013 | PLASTIC ENCAPSULATE TRANSISTORS |  ETC | transistor |
| 5 | S9013 | NPN General Purpose Transistors
S9013
3 1 2
SOT-23
V CEO Value 25 40 5.0 500
S9013=J3
0.1 100 100
25 40
E=20 Vdc, I E= 0 ) 40 5.0
O
0.1 0.1 0.1
u
u u
WEITRON
http://www.weitron.com.tw
S9013
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countin |  Weitron Technology | transistor |
S90 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S9004P2CT | 30A SCHOTTKY BARRIER RECTIFIER S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter  Diodes Incorporated rectifier | | |
| 2 | S9005P2CT | 20A SCHOTTKY BARRIER RECTIFIER S9005P2CT
20A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter Diodes Incorporated rectifier | | |
| 3 | S9011 | NPN Transistor RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: - 55℃ to +150℃
E LECTRICAL C  WEJ transistor | | |
| 4 | S9011 | NPN Silicon Epitaxial Planar Transistor BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA） z Power dissipation.(PC=200mW)
Production specification
S
9011
Pb
Lead-free
APPLICATIONS
z AM converter, AM/FM if amplifier general purpose transistor.
ORDERING INFORMATION
Type No. S 9011 M  BL transistor | | |
| 5 | S9012 | TO-92 Plastic-Encapsulate Transistors ETC transistor | | |
| 6 | S9012 | PNP General Purpose Transistors S9012
PNP General Purpose Transistors
P b Lead(Pb)-Free
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction T Weitron Technology transistor | | |
| 7 | S9012 | PNP Silicon Epitaxial Planar Transistor BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity.
Production specification
S9012
Pb
Lead-free
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION BL transistor | |
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