HBF421 PDF даташит
Спецификация HBF421 изготовлена «Hi-Sincerity Mocroelectronics» и имеет функцию, называемую «PNP EPITAXIAL PLANAR TRANSISTOR». |
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Детали детали
Номер произв | HBF421 |
Описание | PNP EPITAXIAL PLANAR TRANSISTOR |
Производители | Hi-Sincerity Mocroelectronics |
логотип |
4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HBF421
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004.06.18
Page No. : 1/4
Description
Video B-class Power stages in TV-receivers
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Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................................................... 830 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................................................ -300 V
VCEO Collector to Emitter Voltage ..................................................................................................................... -300 V
VEBO Emitter to Base Voltage ............................................................................................................................... -5 V
IC Collector Current ........................................................................................................................................ -50 mA
IBM Peak Base Current ................................................................................................................................... -50 mA
ICM Peak Collector Current ........................................................................................................................... -100 mA
Electrical Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min. Typ. Max.
-300
-
-
-300
-
-
-5 -
-
- - -100
- - -100
- - -0.6
50 -
-
60 -
-
Unit
V
V
V
nA
nA
V
MHz
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-200V, IE=0
VEB=-5V, IE=0
IC=-30mA, IB=-3mA
VCE=-20V, IC=-25mA
IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBF421
HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004.06.18
Page No. : 2/4
Current Gain & Collector Current
1000
hFE @ VCE=20V
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=6IB
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125oC
75oC
125oC
100
25oC
75oC
100
1
25oC
10
Collector Current-IC (mA)
100
10
1
10
Collector Current-IC (mA)
100
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=10IB
125oC
100
25oC
75oC
10
1
10
Collector Current-IC (mA)
100
Capacitance & Reverse-Biased Voltage
100
10
Cob
1
0.1
HBF421
1 10
Reverse Biased Voltage (V)
100
Saturation Voltage & Collector Current
1000
25oC
125oC
75oC
100
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
VBE(sat) @ IC=10IB
10
Collector Current-IC (mA)
PD - Ta
100
50 100 150
Ambient Temperature-Ta (oC )
200
HSMC Product Specification
No Preview Available ! |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004.06.18
Page No. : 3/4
TO-92 Dimension
A
B
123
α2
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H BF
421
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C
E
F
H
I
α3
D
G
α1
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM Min. Max.
A 4.33 4.83
B 4.33 4.83
C 12.70
-
D 0.36 0.56
E - *1.27
F 3.36 3.76
G 0.36 0.56
H - *2.54
I - *1.27
α1 - *5°
α2 - *2°
α3 - *2°
*: Typical, Unit: mm
TO-92 Taping Dimension
DIM Min. Max.
A 4.33 4.83
H2 H2
H2AH2A
D2
D 3.80 4.20
D1 0.36 0.53
D2 4.33 4.83
A
F1,F2 2.40 2.90
H3 H 15.50 16.50
H1 8.50 9.50
H2 -
1
H2A -
1
L
L1
F1F2
H4 H
H3 - 27
H4 - 21
L - 11
H1
W1
L1 2.50
-
W P 12.50 12.90
P1 5.95 6.75
D1 D
P2 50.30 51.30
T - 0.55
T2 P1
TP
T1
P2
T1 - 1.42
T2 0.36 0.68
W 17.50 19.00
W1 5.00 7.00
Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBF421
HSMC Product Specification
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