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Datasheet S9012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S9012 | TO-92 Plastic-Encapsulate Transistors |  ETC | transistor |
| 2 | S9012 | PNP General Purpose Transistors S9012
PNP General Purpose Transistors
P b Lead(Pb)-Free
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction T |  Weitron Technology | transistor |
| 3 | S9012 | PNP Silicon Epitaxial Planar Transistor BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity.
Production specification
S9012
Pb
Lead-free
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION |  BL | transistor |
| 4 | S9012 | PNP Silicon General Purpose Transistor Elektronische Bauelemente
S9012
PNP Silicon General Purpose Transistor
FEATURES
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
Collector 33
Power dissipation PCM : 0.3 W
Collector Current ICM : - 0.5 A
Collector-base voltage V(BR)CBO : - 40 V
Operating & storage junction t |  SeCoS | transistor |
| 5 | S9012 | PNP EPITAXIAL PLANAR TRANSISTOR TIGER ELECTRONIC CO.,LTD
S9012
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The S9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Features
• High total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S901 |  TGS | transistor |
S90 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S9004P2CT | 30A SCHOTTKY BARRIER RECTIFIER S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter  Diodes Incorporated rectifier | | |
| 2 | S9005P2CT | 20A SCHOTTKY BARRIER RECTIFIER S9005P2CT
20A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter Diodes Incorporated rectifier | | |
| 3 | S9011 | NPN Transistor RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: - 55℃ to +150℃
E LECTRICAL C  WEJ transistor | | |
| 4 | S9011 | NPN Silicon Epitaxial Planar Transistor BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA） z Power dissipation.(PC=200mW)
Production specification
S
9011
Pb
Lead-free
APPLICATIONS
z AM converter, AM/FM if amplifier general purpose transistor.
ORDERING INFORMATION
Type No. S 9011 M BL transistor | | |
| 5 | S9012 | TO-92 Plastic-Encapsulate Transistors ETC transistor | | |
| 6 | S9012 | PNP General Purpose Transistors S9012
PNP General Purpose Transistors
P b Lead(Pb)-Free
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction T Weitron Technology transistor | | |
| 7 | S9012 | PNP Silicon Epitaxial Planar Transistor BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity.
Production specification
S9012
Pb
Lead-free
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION BL transistor | |
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