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GRTJ PDF даташит

Спецификация GRTJ изготовлена ​​​​«EIC discrete Semiconductors» и имеет функцию, называемую «(GRTx) GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS».

Детали детали

Номер произв GRTJ
Описание (GRTx) GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
Производители EIC discrete Semiconductors
логотип EIC discrete Semiconductors логотип 

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GRTJ Даташит, Описание, Даташиты
GRTA - GRTM
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
FEATURES :
www.Data*ShGeleats4sU.pcoamssivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : SMC Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.21 gram
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
SMC (DO-214AB)
0.060(1.5 2)
0.030(0.7 6)
0.008(0.203)
0.004(0.102)
0.121(3.07)
0.115(2.92)
0.245(6.2 2)
0.220(5.5 9)
0.10 3(2.62 )
0.07 9(2.00 )
0.012(0.305)
0.006(0.152)
Dimensions in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 2.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL GRTA GRTB GRTD GRTG GRTJ GRTK GRTM UNIT
VRRM
50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
IF(AV) 2.5 A
IFSM 80 A
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
1.3
10
500
150 250
- 65 to + 150
- 65 to + 150
500
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002









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GRTJ Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES ( GRTA - GRTM )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
www.DataSheet4U.com
50
10
+ 0.5 A
Trr
+ 50 Vdc
(approx)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25 A
1 OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
SET TIME BASE FOR 50/100 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.5
2.0
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
80
1.5 60
1.0 40
0.5
60Hz RESISTIVE OR INDUCTIVE LOAD
00
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
20
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 25 °C
10
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : Apr. 2, 2002










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Номер в каталогеОписаниеПроизводители
GRTAGLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERSEIC discrete Semiconductors
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GRTBGLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors
GRTB(GRTx) GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors

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