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C5914 PDF даташит

Спецификация C5914 изготовлена ​​​​«Panasonic» и имеет функцию, называемую «NPN Transistor - 2SC5914».

Детали детали

Номер произв C5914
Описание NPN Transistor - 2SC5914
Производители Panasonic
логотип Panasonic логотип 

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C5914 Даташит, Описание, Даташиты
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Power Transistors
2SC5914
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Features
High breakdown voltage: VCBO 1 500 V
High-speed switching: tf < 200 ns
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
www.DataSheet4U.com Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 500
1 500
600
7
5
12
22
40
3
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
50 µA
VCB = 1 500 V, IE = 0
1 mA
Emitter-base cut-off current (Collector open) IEBO VEB = 7 V, IC = 0
50 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 6 A
5 10
Collector-emitter saturation voltage
VCE(sat) IC = 6 A, IB = 1.5 A
2.5 V
Base-emitter saturation voltage
VBE(sat) IC = 6 A, IB = 1.5 A
1.5 V
Transition frequency
fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3 MHz
Storage time
tstg IC = 6 A, Resistance loaded
2.7 µs
Fall time
tf IB1 = 1.5 A, IB2 = −3.0 A
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2004
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C5914 Даташит, Описание, Даташиты
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2SC5914
PC Ta
80
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
60
40
(1)
20
(2)
(3)
0
0 50 100 150
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
10
IB = 2.0 A
1.8 A
1.6 A
8 1.4 A
1.2 A
1.0 A
0.8 A
6
0.6 A
0.4 A
4
0.2 A
2
0 0A
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC VBE
12
VCE = 5 V
8
4
Ta = 120°C
25°C
40°C
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
10
IC / IB = 4
1
101
Ta = 120°C
101
40°C
25°C
102
101
1
Collector current IC (A)
10
hFE IC
102
VCE = 5 V
Ta = 120°C
25°C
40°C
10
1
101
1
Collector current IC (A)
10
1 000
800
tf IB1(END)
IC = 6.3 A
L load
600
400
200
0
0.4 0.8 1.2 1.6 2.0
Base current IB1(END) (A)
tstg IB1(END)
2.0
IC = 6.3 A
L load
1.6
1.2
0.8
0.4
0
0.4 0.8 1.2 1.6 2.0
Base current IB1(END) (A)
Area of safe operation
102
ICP
10 IC
DC
10 ms
t = 100 µs
1 ms
1
101
Area of safe operation (Horizontal operation)
30
fH = 64 kHz, TC < 90°C
ASO for a single
pulse load caused by
25 EHT flashover during
horizontal operation.
20
15
10
102
Non repetitive pulse
103 TC = 25°C
1 10
VCEO max.
102 103
Collector-emitter voltage VCE (V)
5
0 < 1 mA
0 500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
2
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C5914 Даташит, Описание, Даташиты
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and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
www.DataSheet4(U3).cWome are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
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Consult our sales staff in advance for information on the following applications:
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(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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Номер в каталогеОписаниеПроизводители
C5914NPN Transistor - 2SC5914Panasonic
Panasonic
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Sanyo Semiconductor Corporation

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