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W150NF55 PDF даташит

Спецификация W150NF55 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую « STW150NF55».

Детали детали

Номер произв W150NF55
Описание STW150NF55
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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W150NF55 Даташит, Описание, Даташиты
STB150NF55 STP150NF55
STW150NF55
N-CHANNEL 55V - 0.005 -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
VDSS
RDS(on)
ID
STB150NF55
www.DataSheet4U.cSoTmP150NF55
STP150NF55
55 V
55 V
55 V
<0.006
<0.006
<0.006
120 A(**)
120 A(**)
120 A(**)
s TYPICAL RDS(on) = 0.005
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
3
1
D2PAK
TO-263
(Suffix “T4”)
TO-247
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D2PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(**)
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
Value
55
55
± 20
120
106
480
300
2.0
8
850
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 120A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
1/14









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W150NF55 Даташит, Описание, Даташиты
STB150NF55 STP150NF55 STW150NF55
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
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IDSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0)
ID = 250 µA VGS = 0
55
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
°C/W
°C
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 60 A
Min.
2
Typ.
0.005
Max.
4
0.006
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 60 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
160
4400
1050
350
Max.
Unit
S
pF
pF
pF
2/14









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W150NF55 Даташит, Описание, Даташиты
STB150NF55 STP150NF55 STW150NF55
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 27.5 V
ID = 60 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=27.5 V ID=120A VGS= 10V
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SWITCHING OFF
Symbol
Parameter
Test Conditions
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 27.5 V
ID = 60 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Min.
Typ.
35
180
140
35
70
Typ.
140
80
Max.
170
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 120 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 120 A di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
130
350
7.5
Max.
120
480
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/14










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Номер в каталогеОписаниеПроизводители
W150NF55 STW150NF55STMicroelectronics
STMicroelectronics

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