SD125SA30B PDF даташит
Спецификация SD125SA30B изготовлена «Sensitron» и имеет функцию, называемую «SILICON SCHOTTKY RECTIFIER DIE». |
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Детали детали
Номер произв | SD125SA30B |
Описание | SILICON SCHOTTKY RECTIFIER DIE |
Производители | Sensitron |
логотип |
3 Pages
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SENSITRON
SEMICONDUCTOR
SD125SA30A/B/C
TECHNICAL DATA
DATA SHEET 504, REV. A
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
www.DataSheFete4Ua.ctoumres:
• Soft Reverse Recovery at Low and High Temperature
• Very Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capacity
• Guard Ring for Enhanced Durability and Long Term Reliability
• Guaranteed Reverse Avalanche Characteristics
• Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
TJ
Tstg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave (1)
TJ = 25 °C, IAS = 3.0 A,
L = 2.9 mH
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
-
-
Max.
30
15
280
13
3.0
-65 to +150
-65 to +150
Units
V
A
A
mJ
A
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Max. Junction Capacitance
(1) in SHD package
Symbol
VF1
VF2
IR1
IR2
CT
Condition
@ 15A, Pulse, TJ = 25 °C
@ 15A, Pulse, TJ = 125 °C
@VR = 30V, Pulse,
TJ = 25 °C
@VR = 30V, Pulse,
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.49
0.39
2.0
100
1100
Units
V
V
mA
mA
pF
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
No Preview Available ! |
SENSITRON
TECHNICAL DATA
DATA SHEET 504, REV. A
SD125SA30A/B/C
Typical Forward Characteristics
www.DataSheet4U.com
101
150 °C
100 125 °C
25 °C
10-1
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage Drop - VF (V)
Typical Reverse Characteristics
102 150 °C
125 °C
101
100 °C
100 75 °C
50 °C
10-1
25 °C
10-2
0
1000
10 20 30
Reverse Voltage - VR (V)
Typical Junction Capacitance
900
800
700
600
40
0 10 20 30 40
Reverse Voltage - VR (V)
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
No Preview Available ! |
SENSITRON
TECHNICAL DATA
DATA SHEET 504, REV. A
SD125SA30A/B/C
Mechanical Dimensions: In Inches / mm
HD
h
www.DataSheet4U.com
BA
A
0.125±0.003
Figure 1
B
0.116±0.003
Figure 2
D
0.070±0.005
H
0.0155±0.001
h
0.010±0.002
Top side(Anode) metallization:
A = Al - 25 kÅ minimum, Figure 1
B = Ag - 30 kÅ minimum, Figure 1
C = Au - 12 kÅ min, Figure 2
Bottom side (Cathode) metallization:
A, B, C = Ti/Ni/Ag - 30 kÅ minimum.
Bottom side is cathode, top side is anode.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
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Номер в каталоге | Описание | Производители |
SD125SA30A | SILICON SCHOTTKY RECTIFIER DIE | Sensitron |
SD125SA30B | SILICON SCHOTTKY RECTIFIER DIE | Sensitron |
SD125SA30C | SILICON SCHOTTKY RECTIFIER DIE | Sensitron |
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