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PDF C1317 Data sheet ( Hoja de datos )
| Número de pieza | C1317 | |
| Descripción | NPN Transistor - 2SC1317 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C1317 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0719 and 2SA0720
5.0±0.2
Unit: mm
4.0±0.2
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• Complementary pair with 2SA0719 and 2SA0720
■ Absolute Maximum Ratings Ta = 25°C
www.DataSheet4U.com Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SC1317
2SC1318
VCBO
30
60
Collector-emitter voltage 2SC1317
(Base open)
2SC1318
VCEO
25
50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
7
0.5
1
625
150
−55 to +150
Unit
V
V
V
A
A
mW
°C
°C
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
2SC1317 VCBO IC = 10 µA, IE = 0
30
V
(Emitter open)
2SC1318
60
Collector-emitter voltage 2SC1317 VCEO IC = 10 mA, IB = 0 25 V
(Base open)
2SC1318
50
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1 µA
Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 150 mA
85 340
hFE2 VCE = 10 V, IC = 500 mA
40
Collector-emitter saturation voltage *1 VCE(sat) IC = 300 mA, IB = 30 mA
0.35 0.60
V
Base-emitter saturation voltage *1
VBE(sat) IC = 300 mA, IB = 30 mA
1.1 1.5
V
Transition frequency
fT VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Publication date: March 2003
SJC00100CED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C1317.PDF ] | |
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