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S8550 PDF даташит

Спецификация S8550 изготовлена ​​​​«Hamamatsu Corporation» и имеет функцию, называемую «Si APD array».

Детали детали

Номер произв S8550
Описание Si APD array
Производители Hamamatsu Corporation
логотип Hamamatsu Corporation логотип 

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S8550 Даташит, Описание, Даташиты
APD
Si APD array
S8550
4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity
S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550
also offers uniform gain and small cross-talk between each element.
Features
lwww.DataSheet4U.com
High sensitivity and low noise in short wavelength region
l Low terminal capacitance
l Optimized for blue light detection
l Uniform gain and low cross-talk variation between
each element
Applications
l Low-light-level photometry in the visible range
l Detector systems combined with scintillator
s General ratings
Parameter
Element size
Element pitch
Package
Window material
Rating
1.6 × 1.6 (× 32 elements)
2.3
Ceramic
Epoxy resin
s Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
Value
-20 to +60
-20 to +80
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp M=50
Quantum efficiency
QE λ=420 nm
Breakdown voltage
VBR
Dark current
ID per 1 element, M=50
Terminal capacitance
Ct
per 1 element, M=50,
f=10 kHz
Gain
M
Min.
-
-
60
-
-
-
-
Typ.
320 to 1000
600
70
400
10
10
50
Max.
-
-
-
500
50
-
-
Unit
mm
mm
-
-
Unit
°C
°C
Unit
nm
nm
%
V
nA
pF
-
1









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S8550 Даташит, Описание, Даташиты
s Quantum efficiency vs. wavelength
(Typ. Ta=25 ˚C)
100
Si APD array S8550
s Gain vs. reverse voltage
1000
(Typ. Ta=25 ˚C, λ=420 nm)
80
100
60
40
www.DataSheet4U.com20
10
0
200 400 600 800 1000
WAVELENGTH (nm)
s Dimensional outline (unit: mm)
19.50
2.30 ARRAY 2
1200
KAPDB0059EA
0.9
1
0 100 200 300
REVERSE VOLTAGE (V)
15.24
1.27
A4 B4 C4 D4 E4 F4 G4 H4
A3 B3 C3 D3 E3 F3 G3 H3
A2 B2 C2 D2 E2 F2 G2 H2
A1 B1 C1 D1 E1 F1 G1 H1
ACTIVE AREA
1.6 × 1.6 (ANODE)
ARRAY 1
PHOTOSENSITIVE
SURFACE
f
e
d
c
b
a
13 12 11 10 9 8 7 6 5 4 3 2 1
INDEX MARK
400
KAPDB0063EA
1.27
15.24
Pin No. Element No. Pin No. Element No. Pin No. Element No. Pin No. Element No.
1a CATHODE 1 6b D1 3d C3 1f A4
3a B1 8b E1 11d G3 3f B4
5a C2 10b F1 13d H4 5f D3
7a
D2 12b G2
2e
B3
7f
E3
9a E2 1c A1 4e C4 9f F3
11a G1 3c B2 6e D4 11f G4
13a H1 11c F2 8e E4 13f CATHODE 2
2b A2 13c H2 10e F4
4b C1 1d A3 12e H3
CATHODE 1: CATHODE OF ARRAY 1
CATHODE 2: CATHODE OF ARRAY 2
KAPDA0023EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KAPD1009E02
2 Jun. 2006 DN










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