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PDF NTP70N08 Data sheet ( Hoja de datos )

Número de pieza NTP70N08
Descripción 80V Power MOSFET
Fabricantes ON Semiconductor 
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No Preview Available ! NTP70N08 Hoja de datos, Descripción, Manual

NTP70N08, NTB70N08,
NTP70N08L, NTB70N08L
Product Preview
80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
www.DataSheet4aUlt.ecornmator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
V(BR)DSS
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150°C)
IDSS
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
80
Vdc
––
µAdc
– 1.0
– 10
nAdc
±100
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
NTP/B70N08
VGS(th)
Vdc
2.0 3.0 4.0
NTP/B70N08L
1.0 1.5 2.0
Static Drain–to–Source
On–Resistance
RDS(on)
m
(ID = 35 Adc)
NTP/B70N08, VGS= 10 V
NTP/B70N08L, VGS = 5 V
– 19
– 21
http://onsemi.com
70 AMPERES
70N08 Typ RDS(on) = 19 m
70N08L Typ RDS(on) = 21 m
TO–220 (XTP)
CASE 221A–09
STYLE 5
D2PAK (XTB)
CASE 418B
STYLE 2
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 0
1
Publication Order Number:
NTP70N08/D

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