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PDF H9926CS Data sheet ( Hoja de datos )
| Número de pieza | H9926CS | |
| Descripción | Dual N-Channel Enhancement-Mode MOSFET | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200508
Issued Date : 2005.08.01
Revised Date : 2005.10.06
Page No. : 1/4
H9926S / H9926CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
www.DataShtreeent4cUh.pcoromcess. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
• RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
•
1
2
3
4
8
76
5
8-Lead Plastic SO-8
Package Code: S
H9926S Symbol & Pin Assignment
5
6 Q1
7
8 Q2
Pin 1: Source 2
4 Pin 2: Gate 2
3 Pin 3: Source 1
2 Pin 4: Gate 1
Pin 5 / 6: Drain 1
1 Pin 7 / 8: Drain 2
H9926CS Symbol & Pin Assignment
5
6 Q1
7
8 Q2
Pin 1: Source 2
4 Pin 2: Gate 2
3 Pin 3: Source 1
2 Pin 4: Gate 1
1 Pin 5 / 6 / 7 / 8: Drain
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
Tj, Tstg
RθJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
Total Power Dissipation @TA=75oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
20
±12
6
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
H9926S, H9926CS
HSMC Product Specification
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet H9926CS.PDF ] | |
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