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NP80N04NHE PDF даташит

Спецификация NP80N04NHE изготовлена ​​​​«NEC» и имеет функцию, называемую «(NP80N04xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET».

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Номер произв NP80N04NHE
Описание (NP80N04xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
Производители NEC
логотип NEC логотип 

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NP80N04NHE Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04EHE, NP80N04KHE
NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
www.DataSheet4U.coTmhese products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04EHE-E1-AY Note1, 2
NP80N04EHE-E2-AY Note1, 2
NP80N04KHE-E1-AY Note1
NP80N04KHE-E2-AY Note1
NP80N04CHE-S12-AZ Note1, 2
NP80N04DHE-S12-AY Note1, 2
NP80N04MHE-S18-AY Note1
NP80N04NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
Low input capacitance
Ciss = 2200 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14239EJ7V0DS00 (7th edition)
Date Published October 2007 NS
1999, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.









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NP80N04NHE Даташит, Описание, Даташиты
NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (Pulse) Note2
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
www.DataSheet4U.cSoimngle Avalanche Current Note3
Single Avalanche Energy Note3
VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
IAS
EAS
40
±20
±80
±280
1.8
120
175
55 to +175
52/31/13
2.7/96/169
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 μs, Duty cycle 1%
3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
2 Data Sheet D14239EJ7V0DS









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NP80N04NHE Даташит, Описание, Даташиты
NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 40 A
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 40 A
Input Capacitance
www.DataSheet4U.cOoumtput Capacitance
Ciss
Coss
VDS = 25 V,
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 40 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 1 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 32 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
QGD ID = 80 A
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
Reverse Recovery Time
trr IF = 80 A, VGS = 0 V,
Reverse Recovery Charge
Qrr di/dt = 100 A/μs
MIN. TYP. MAX.
10
±10
2.0 3.0 4.0
15 31
6.2 8.0
2200 3300
490 730
230 410
24 52
14 36
44 88
15 37
40 60
12
16
1.0
40
50
Unit
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D14239EJ7V0DS
3










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Номер в каталогеОписаниеПроизводители
NP80N04NHE(NP80N04xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FETNEC
NEC

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