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PDF HMF3M32M6V Data sheet ( Hoja de datos )

Número de pieza HMF3M32M6V
Descripción FLASH-ROM MODULE
Fabricantes Hanbit Electronics 
Logotipo Hanbit Electronics Logotipo



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HANBit
HMF3M32M6V
FLASH-ROM MODULE 12MByte (3M x 32-Bit) ,72pin-SIMM, 3.3V
Part No. HMF3M32M6V
GENERAL DESCRIPTION
The HMF3M32M6VA is a high-speed flash read only memory (FROM) module containing 6,291,456 words organized in a
x32bit configuration. The module consists of six 1M x 16 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from other flash or EPROM devices.
www.DataSheet4U.Ocoumtput enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +3.0V DC power supply.
FEATURES
w Access time : 70,80, 90 and 120ns
w High-density 12MByte design
w High-reliability, low-power design
w Single + 3V ± 0.3V power supply
w Easy memory expansion
w Hardware reset pin(RESET#)
w FR4-PCB design
w Low profile 72-pin SIMM
w Minimum 1,000,000 write/erase cycle
w Flexible sector architecture
w Embedded algorithms
w Erase suspend / Erase resume
OPTIONS
w Timing
70ns access
80ns access
90ns access
120ns access
MARKING
-70
-80
-90
-120
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 25 DQ17 49 /WE
2 /RESET 26
DQ18
50
A18
3 DQ0 27 DQ19 51 A17
4 DQ1 28 DQ20 52 A16
5 DQ2 29 DQ21 53 A15
6
DQ3
30
Vcc
54
A14
7 DQ4 31 DQ22 55 A13
8 DQ5 32 DQ23 56 A12
9
DQ6
33 /CE_1H 57
A11
10 Vcc 34 /CE_2H 58 A10
11 DQ7 35 DQ24 59
Vcc
12 /CE_1L 36
DQ25
60
A9
13 /CE_2L 37
DQ26
61
A8
14 DQ8 38 DQ27 62
A7
15 DQ9 39 Vss 63 A6
16 DQ10 40
DQ28
64
A5
17 DQ11 41
DQ29
65
A4
18 DQ12 42
DQ30
66
A3
19 DQ13 43
DQ31
67
A2
20 DQ14 44 NC 68 A1
21 DQ15 45 NC 69 A0
22 NC 46
23 /CE_3H 47
24 DQ16 48
/CE_3L
A19
/OE
70
71
72
NC
NC
Vss
w Packages
72-pin SIMM
M
72-PIN SIMM
TOP VIEW
URL: www.hbe.co.kr
REV.02(August,2002)
1 HANbit Electronics Co., Ltd.

1 page




HMF3M32M6V pdf
HANBit
HMF3M32M6V
1. Typical program and erase times assume the following conditions: 25 OC, 3.0V Vcc, 1,000,000 cycles. Additionally
programming typical assume checkerboard pattern.
2. Under worst case conditions of 90OC, Vcc=2.7V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since
most bytes program faster than the maximum program times listed
4. In the pre-programming step of the Embedded Erase algorithm, all byt es are programmed to 00h before erasure.
5. System-level overhead is the time required to excute the two-or four-bus-cycle sequence for the program command.
See table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
www.DataSheet4U.com
SOP/TSOP PIN CAPACITANCE
PARAMETER
SYMBOL
PARAMETER
DESCRIPTION
TEST SETUP
TYP.
MAX
UNIT
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
VIN = 0
VOUT = 0
VIN = 0
6 7.5 pF
8.5 12 pF
7.5 9 pF
Notes : 1. Sampled, not 100% tested
2.Test conditions TA = 25o C, f=1.0 MHz.
TEST SPECIFICATIONS
TEST CONDITION
Output load
Output load capacitance,
CL (Including jig capacitance)
Input rise and fall times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
80R -90/ -120
1TTL gate
30 100
5
0.0 - 3.0
1.5
1.5
UNIT
pF
ns
V
V
V
URL: www.hbe.co.kr
REV.02(August,2002)
5 HANbit Electronics Co., Ltd.

5 Page





HMF3M32M6V arduino
HANBit
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF3M32M6V
www.DataSheet4U.com
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
11 HANbit Electronics Co., Ltd.

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