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PDF HMF8M16F8V-90 Data sheet ( Hoja de datos )
| Número de pieza | HMF8M16F8V-90 | |
| Descripción | FLASH-ROM MODULE | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMF8M16F8V-90
FLASH-ROM MODULE 16MByte (8M x 16-Bit) – Memory Stack
Type
Part No. HMF8M16F8V- 90
GENERAL DESCRIPTION
The HMF8M16F8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an
x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
www.DataSheet4U.Ocoumtput enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTL-
compatible.
FEATURES
w Part identification
- HMF8M16F8V(Bottom boot block configuration)
w Access time: 70, 80, 90, 120ns
w High-density 16MByte design
w High-reliability, low-power design
w Single + 3V to 3.6V power supply
w 100-Pin Designed
50-Pin Fine Pitch MMC Connector P1,P2
w Minimum 1,000,000 write cycle guarantee
per sector
w 20-year data retention at 125 oC
w Flexible sector architecture
w Embedded algorithms
w Erase suspend / Erase resume
OPTIONS
w Timing
70ns access
80ns access
90ns access
120ns access
w Packages
FH 100-pin
MARKING
- 70
- 80
- 90
-120
F
PIN ASSIGNMENT
Vcc 1
A22 2
A21 3
A20 4
DQ15 5
DQ14 6
DQ13 7
Vss 8
DQ12 9
DQ11 10
DQ10 11
DQ8 12
Vss 13
DQ6 14
DQ4 15
DQ3 16
DQ2 17
Vss 18
DQ1 19
DQ0 20
A0 21
A1 22
A2 23
A3 24
Vcc 25
26 Vcc
27 NC
28 A19
29 A18
30 A17
31 A16
32 A15
33 Vss
34 A14
35 A13
36 DQ9
37 DQ7
38 Vss
39 DQ5
40 A12
41 A11
42 A10
43 Vss
44 A9
45 A8
46 A7
47 A6
48 A5
49 A4
50 Vcc
Vcc 1
NC 2
/WE0 3
/WE1 4
Ready 5
NC 6
NC 7
Vss 8
/OE 9
/CS 10
NC 11
NC 12
Vss 13
NC 14
NC 15
NC 16
/Reset 17
Vss 18
NC 19
NC 20
NC 21
NC 22
Vss 23
NC 24
Vcc 25
26 Vcc
27 NC
28 NC
29 NC
30 NC
31 NC
32 NC
33 Vss
34 NC
35 NC
36 NC
37 NC
38 Vss
39 NC
40 NC
41 NC
42 NC
43 Vss
44 NC
45 NC
46 NC
47 NC
48 Vss
49 NC
50 Vcc
50-PIN P1 Connector
50-PIN P2 Connector
URL: www.hbe.co.kr
REV.02(August,2002)
1 HANBit Electronics Co., Ltd.
1 page  
HANBit
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
tCE Chip Enable to Output Delay
tOE Chip Enable to Output Delay
tDF Chip Enable to Output High-Z
tDF Output Enable to Output High-Z
Output Hold Time From Addresses,
tQH
/CE or /OE, Whichever Occurs First
HMF8M16F8V-90
/OE = VIL
Max
Max
Max
Max
Min
80
80
25
25
0
90 ns
90 ns
30 ns
30 ns
0 ns
TEST CONDITIONS
www.DataSheet4U.com
Notes : Test Conditions : Output Load : 1TTL gate and 100 pF
Input rise and fall times : 5 ns
Input pulse levels: 0V to 3.0V
Timing measurement reference level
Input : 1.5 V
Output : 1.5V
Device
Under
Test
CL
3.3V
IN3064
or Equivalent
2.7kΩ
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
URL: www.hbe.co.kr
REV.02(August,2002)
5 HANBit Electronics Co., Ltd.
5 Page 
HANBit
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF8M16F8V-90
www.DataSheet4U.com
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
11 HANBit Electronics Co., Ltd.
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet HMF8M16F8V-90.PDF ] | |
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