M16JZ47 PDF даташит
Спецификация M16JZ47 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую « SM16JZ47A». |
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Детали детали
Номер произв | M16JZ47 |
Описание | SM16JZ47A |
Производители | Toshiba Semiconductor |
логотип |
5 Pages
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SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 16A
l High Commutating (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
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MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
SM16GZ47
SM16GZ47A
SM16JZ47
SM16JZ47A
R.M.S On−State Current
(Full Sine Waveform Tc = 73°C)
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
SYMBOL
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
VISOL
RATING
400
600
16
150 (50Hz)
165 (60Hz)
112.5
50
5
0.5
10
2
−40~125
−40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13−10H1A
Note 1:
di / dt Test condition
VDRM = 0.5 × Rated
ITM ≤ 25A
tgw ≥ 10µs
tgr ≤ 250ns
iGP = IGT × 2.0
1 2001-07-13
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SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
Gate Trigger Voltage
II
III
IV
I
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Gate Trigger
Current
SM16GZ47
SM16JZ47
II
III
IV
I
SM16GZ47A
SM16JZ47A
II
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off−State Voltage
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
Critical Rate of Rise of
Off−State Voltage at
Commutation
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (j−c)
VDRM = Rated
T2 (+) , Gate (+)
VD = 12V,
RL = 20Ω
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
VD = 12V,
RL = 20Ω
T2 (−) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
T2 (−) , Gate (+)
ITM = 25A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
MIN TYP. MAX UNIT
― ― 20 µA
― ― 1.5
― ― 1.5
V
― ― 1.5
―――
― ― 30
― ― 30
― ― 30
―――
mA
― ― 20
― ― 20
― ― 20
―――
― ― 1.5 V
0.2 ― ― V
― ― 50 mA
― ― 2.5 °C / W
― 300 ―
V / µs
― 200 ―
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = − 8.7A / ms
10 ― ―
V / µs
4 ――
MARKING
* NUMBER
SYMBOL
* 1 Toshiba Product Mark
SM16GZ47, SM16GZ47A
*2
TYPE
SM16JZ47, SM16JZ47A
* 3 SM16GZ47A, SM16JZ47A
MARK
M16GZ47
M16JZ47
A
Example
*4
8A : January 1998
8B : February 1998
8L : December 1998
2 2001-07-13
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SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
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3 2001-07-13
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M16JZ47 | SM16JZ47A | Toshiba Semiconductor |
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