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M16JZ47 PDF даташит

Спецификация M16JZ47 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую « SM16JZ47A».

Детали детали

Номер произв M16JZ47
Описание SM16JZ47A
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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M16JZ47 Даташит, Описание, Даташиты
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak OffState Voltage : VDRM = 400, 600V
l R.M.S OnState Current
: IT (RMS) = 16A
l High Commutating (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
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MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
OffState Voltage
SM16GZ47
SM16GZ47A
SM16JZ47
SM16JZ47A
R.M.S OnState Current
(Full Sine Waveform Tc = 73°C)
Peak One Cycle Surge OnState
Current (NonRepetitive)
I2t Limit Value
Critical Rate of Rise of OnState
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
SYMBOL
VDRM
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
VISOL
RATING
400
600
16
150 (50Hz)
165 (60Hz)
112.5
50
5
0.5
10
2
40~125
40~125
1500
UNIT
V
A
A
A2s
A / µs
W
W
V
A
°C
°C
V
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
1310H1A
Note 1:
di / dt Test condition
VDRM = 0.5 × Rated
ITM 25A
tgw 10µs
tgr 250ns
iGP = IGT × 2.0
1 2001-07-13









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M16JZ47 Даташит, Описание, Даташиты
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
Gate Trigger Voltage
II
III
IV
I
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Gate Trigger
Current
SM16GZ47
SM16JZ47
II
III
IV
I
SM16GZ47A
SM16JZ47A
II
III
IV
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
OffState Voltage
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
Critical Rate of Rise of
OffState Voltage at
Commutation
SM16GZ47
SM16JZ47
SM16GZ47A
SM16JZ47A
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (jc)
VDRM = Rated
T2 (+) , Gate (+)
VD = 12V,
RL = 20
T2 (+) , Gate ()
T2 () , Gate ()
T2 () , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
VD = 12V,
RL = 20
T2 () , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
T2 () , Gate (+)
ITM = 25A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
MIN TYP. MAX UNIT
― ― 20 µA
― ― 1.5
― ― 1.5
V
― ― 1.5
―――
― ― 30
― ― 30
― ― 30
―――
mA
― ― 20
― ― 20
― ― 20
―――
― ― 1.5 V
0.2 ― ― V
― ― 50 mA
― ― 2.5 °C / W
300
V / µs
200
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = 8.7A / ms
10 ― ―
V / µs
4 ――
MARKING
* NUMBER
SYMBOL
* 1 Toshiba Product Mark
SM16GZ47, SM16GZ47A
*2
TYPE
SM16JZ47, SM16JZ47A
* 3 SM16GZ47A, SM16JZ47A
MARK
M16GZ47
M16JZ47
A
Example
*4
8A : January 1998
8B : February 1998
8L : December 1998
2 2001-07-13









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M16JZ47 Даташит, Описание, Даташиты
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
www.DataSheet4U.com
3 2001-07-13










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Номер в каталогеОписаниеПроизводители
M16JZ47 SM16JZ47AToshiba Semiconductor
Toshiba Semiconductor

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