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Datasheet HFDOM44S3RXXX Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | HFDOM44S3Rxxx | 44Pin Flash Disk Module HANBit
HFDOM44S3Rxxx
44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface
1. PRODUCT OVERVIEW
GENERAL DESCRIPTION
The HFDOM44S3Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip an | Hanbit Electronics | data |
HFD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | HFD1N60 | N-Channel MOSFET HFD1N60_HFU1N60
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics U SemiHow mosfet | | |
2 | HFD1N60F | 600V N-Channel MOSFET HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics SemiHow mosfet | | |
3 | HFD1N60S | N-Channel MOSFET HFD1N60S / HFU1N60S
Sep 2009
HFD1N60S / HFU1N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteri SemiHow mosfet | | |
4 | HFD1N65 | N-Channel MOSFET HFD1N65 / HFU1N65
April 2006
HFD1N65 / HFU1N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Character SemiHow mosfet | | |
5 | HFD1N65S | N-Channel MOSFET HFD1N65S / HFU1N65S
HFD1N65S / HFU1N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Exte SemiHow mosfet | | |
6 | HFD1N70 | N-Channel MOSFET HFD1N70 / HFU1N70
Dec 2008
HFD1N70 / HFU1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | | |
7 | HFD1N80 | N-Channel MOSFET HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characterist SemiHow mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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