DataSheet26.com

C3680 PDF даташит

Спецификация C3680 изготовлена ​​​​«Sanken electric» и имеет функцию, называемую «NPN Transistor - 2SC3680».

Детали детали

Номер произв C3680
Описание NPN Transistor - 2SC3680
Производители Sanken electric
логотип Sanken electric логотип 

1 Pages
scroll

No Preview Available !

C3680 Даташит, Описание, Даташиты
2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SC3680
VCBO
900
VCEO
800
VEBO
7
IC 7(Pulse14)
IB 3.5
PC 120(Tc=25°C)
Tj 150
www.DataSheeTts4tgU.com –55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=3A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
250 83 3 10 –5 0.45
IB2
(A)
–1.5
ton
(µs)
1max
(Ta=25°C)
2SC3680
100max
100max
800min
10 to 30
0.5max
1.2max
6typ
105typ
Unit
µA
µA
V
V
V
MHz
pF
tstg
(µs)
5max
tf
(µs)
1max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
7 1A
6
700mA
500mA
300mA
4
200mA
IB=100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
0
0.02
VCE(sat)
125˚C
–5 5 ˚ C
0.05 0.1
0.5 1
Collector Current IC(A)
57
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
7
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
25˚C
125˚C
–55˚C
10
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
57
t on• t stg• t f– I C Characteristics (Typical)
10
5
VCC 250V
IC:IB1:IB2=2:0.3:–1Const.
tstg
1
0.5
0.2
0.1
tf
ton
0.5 1
Collector Current IC(A)
57
θ j-a– t Characteristics
2
1
0.5
0.1
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
20
10
5
10ms 1ms 100µs
Reverse Bias Safe Operating Area
20
10
5
Pc–Ta Derating
120
100
11
0.5 0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.01
2
5 10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
0.01
50
100 500
Collector-Emitter Voltage VCE(V)
1000
50
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
69










Скачать PDF:

[ C3680.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C3680NPN Transistor - 2SC3680Sanken electric
Sanken electric
C3685NPN Transistor - 2SC3685Sanyo Semicon Device
Sanyo Semicon Device
C3686NPN Transistor - 2SC3686Sanyo Semicon Device
Sanyo Semicon Device
C3688NPN Transistor - 2SC3688Sanyo Semicon Device
Sanyo Semicon Device

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск