Datasheet CGD1042H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	CGD1042H	23 dB gain high output power doubler CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 01 — 9 October 2007 Product data sheet 1. Product proﬁle 1.1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor	NXP Semiconductors	data
2	CGD1042HI	1 GHz 22 dB gain GaAs high output power doubler CGD1042HI Rev. 01 — 21 September 2009 1 GHz, 22 dB gain GaAs high output power doubler Product data sheet 1. Product proﬁle 1.1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero ju	NXP Semiconductors	data

CGD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	CGD1029	Diode, Rectifier	American Microsemiconductor	diode
2	CGD1040HI	1 GHz 20 dB gain GaAs high output power doubler CGD1040HI Rev. 01 — 22 September 2009 1 GHz, 20 dB gain GaAs high output power doubler Product data sheet 1. Product proﬁle 1.1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero ju	NXP Semiconductors	data
3	CGD1042H	23 dB gain high output power doubler CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 01 — 9 October 2007 Product data sheet 1. Product proﬁle 1.1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor	NXP Semiconductors	data
4	CGD1042HI	1 GHz 22 dB gain GaAs high output power doubler CGD1042HI Rev. 01 — 21 September 2009 1 GHz, 22 dB gain GaAs high output power doubler Product data sheet 1. Product proﬁle 1.1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero ju	NXP Semiconductors	data
5	CGD1044H	25 dB gain high output power doubler CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 01 — 10 October 2007 Product data sheet 1. Product proﬁle 1.1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor	NXP Semiconductors	data
6	CGD1044HI	25 dB gain GaAs high output power doubler CGD1044HI Rev. 01 — 21 September 2009 1 GHz, 25 dB gain GaAs high output power doubler Product data sheet 1. Product proﬁle 1.1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero ju	NXP Semiconductors	data
7	CGD1046HI	27DB Gain GaAs High Output Power Doubler Hybrid amplifier module CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler Rev. 1 — 30 July 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor	NXP Semiconductors	amplifier

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Número de pieza	Descripción	Fabricantes	PDF
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