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W34NB20 PDF даташит

Спецификация W34NB20 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую « STW34NB20».

Детали детали

Номер произв W34NB20
Описание STW34NB20
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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W34NB20 Даташит, Описание, Даташиты
STW34NB20
N-CHANNEL 200V - 0.062 - 34A TO-247
PowerMESH™ MOSFET
Table 1. General Features
Type
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STW34NB20
VDSS
200 V
RDS(on)
< 0.075
ID
34 A
Figure 1. Package
FEATURES SUMMARY
TYPICAL RDS(on) = 0.062
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/dt
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
HIGH CURRENT, HIGH SPEED SWITCHING
3
2
1
TO-247
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STW34NB20
Marking
W34NB20
Package
TO-247
Packaging
TUBE
April 2004
REV. 2
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W34NB20 Даташит, Описание, Даташиты
STW34NB20
Table 3. Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (cont.) at TC = 25 °C
ID Drain Current (cont.) at TC = 100 °C
IDM (1)
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Ptot
Drain Current (pulsed)
Total Dissipation at TC = 25 °C
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
Note: 1. Pulse width limited by safe operating area
Table 4. Thermal Data
Symbol
Parameter
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
Table 5. Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C; ID = IAR; VDD = 50 V)
Value
200
200
± 30
34
21
136
180
1.44
-65 to 150
150
Value
0.69
30
300
Max Value
34
650
Unit
V
V
V
A
A
A
W
W°/C
°C
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
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W34NB20 Даташит, Описание, Даташиты
STW34NB20
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 6. Off
Symbol
Parameter
V(BR)DSS Drain-source
Breakdown Voltage
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
IGSS
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Gate-body Leakage
Current (VDS = 0)
Test Conditions
ID = 250 µA VGS = 0
VDS = Max Rating
VDS = Max Rating Tc = 125 °C
VGS = ± 30 V
Min. Typ.
200
Max.
Unit
V
1
10
± 100
µA
µA
nA
Table 7. On (1)
Symbol
Parameter
Test Conditions
VGS(th) Gate Threshold Voltage
VDS = VGS; ID = 250 µA
RDS(on) Static Drain-source On
Resistance
VGS = 10V; ID = 17 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max.
34
5
0.062 0.075
Unit
V
Table 8. Dynamic
Symbol
Parameter
Test Conditions
gfs (1) Forward
Transconductance
VDS > ID(on) x RDS(on)max; ID = 17 A
Ciss Input Capacitance
VDS = 25 V; f = 1 MHz; VGS = 0
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
8 17
Max.
Unit
S
2400
650
90
3300
900
130
pF
pF
pF
Table 9. Switching On
Symbol
Parameter
td(on) Turn-on Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 100 V; ID = 17 A; RG = 4.7
VGS = 10 V (see test circuit, Figure 16)
VDD = 160 V; ID = 34 A; VGS = 10 V
Min.
Typ.
30
40
60
19
29
Max.
40
55
80
Unit
ns
ns
nC
nC
nC
Table 10. Switching Off
Symbol
Parameter
tr(Voff) Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 160 V; ID = 34 A; RG = 4.7
VGS = 10 V (see test circuit, Figure 18)
Min.
Typ.
17
18
35
Max.
23
24
47
Unit
ns
ns
ns
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W34NB20 STW34NB20STMicroelectronics
STMicroelectronics

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