(PDF) H5N2305PF Datasheet - Silicon N Channel MOSFET High Speed Power Switching

Número de pieza	H5N2305PF
Descripción	Silicon N Channel MOSFET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H5N2305PF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current www.DataSheet•4U.cHoimgh speed switching Outline TO-3PFM D G S REJ03G0026-0200Z Rev.2.00 Jun.25.2004 1 23 1. Gate 2. Drain 3. Source Rev.2.00, Jun.25.2004, page 1 of 9 1 page H5N2305PF Drain to Source Saturation Voltage vs. Gate to Source Voltage 2 Pulse Test 1.6 www.DataSheet4U.com 1.2 I D = 35 A 0.8 17.5 A 0.4 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.1 Pulse Test VGS = 10 V,15V 0.05 0.02 0.01 1 2 10 20 100 300 1000 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test VGS = 10 V 0.08 ID = 35 A 0.06 17.5 A 0.04 5A 0.02 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 50 Tc = –25°C 20 10 25°C 5 2 75°C 1 0.5 0.2 V DS = 10 V Pulse Test 0.1 0.1 0.3 1 3 10 30 100 300 1000 Drain Current ID (A) Rev.2.00, Jun.25.2004, page 5 of 9 5 Page

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PDF H5N2305PF Data sheet ( Hoja de datos )