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PDF H5N2005DL Data sheet ( Hoja de datos )
| Número de pieza | H5N2005DL | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H5N2005DL (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
www.DataSheAet4cUc.coormdingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
H5N2005DL, H5N2005DS
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 200
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
I GSS
I DSS
VGS(off)
RDS(on)
—
—
(3.0)
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
(2.0)
—
Output capacitance
www.DaRtaeSvheereste4Utr.acnomsfer capacitance
Coss
Crss
—
—
Total Gate charge
Qg —
Gate to source charge
Qgs —
Gateto drain charge
Qgd —
Turn-on delay time
td(on) —
Rise time
tr —
Turn-off delay time
td(off) —
Fall time
tf —
Body-drain diode forward
voltage
VDF —
Body-drain diode reverse trr —
recovery time
Body-drain diode reverse
recovery charge
Qrr —
Note: 4. Pulse test
Typ Max Unit
——V
—
—
—
(0.52)
±0.1
1
(4.5)
(0.65)
µA
µA
V
Ω
(3.4)
(300)
(50)
(14)
(9.5)
(1.8)
(5.2)
(19)
(16)
(44)
(12)
(1.0)
—
—
—
—
—
—
—
—
—
—
—
(1.5)
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
(90) —
ns
(300) —
nC
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 200 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 3 A, VGS = 10 V Note 4
ID = 3 A, VDS = 10 V Note 4
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 160 V
VGS = 10 V
ID = 6 A
ID = 3 A
VGS = 10 V
RL = 33.3 Ω
Rg = 10 Ω
IF = 6 A, VGS = 0
IF = 6 A, VGS = 0
diF/dt = 100 A/us
3
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet H5N2005DL.PDF ] | |
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| H5N2005DL | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
| H5N2005DS | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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