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PDF C30T04QH-11A Data sheet ( Hoja de datos )
| Número de pieza | C30T04QH-11A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | Nihon Inter Electronics | |
| Logotipo |  |
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S B D T y p e : C30T04QH-11A
OUTLINE DRAWING
FEATURES
*Tabless TO-220
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
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Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
VRRM
VRRSM
IO
IF(RMS)
IFSM
Tjw
Tstg
Approx Net Weight: 1.45g
C30T04QH-11A
40
45(pulse width ≤ 1µs duty ≤ 1/50)
30
Tc=114°C
50 Hz Full Sine Wave
Resistive Load
33.3
250
50Hz Full Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
Unit
V
V
A
A
A
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
per arm
VFM
Tj= 25°C, IFM= 15 A
per arm
Rth(j-c) Junction to Case
Min. Typ. Max. Unit
- - 1 mA
- - 0.61 V
- - 1.5 °C /W
1 page  
0° 180°
θ
CONDUCTION ANGLE
35
30
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
RECT 180°
V RM =40 V
C30T04QH/C30T04QH-11A (Total)
SINE WAVE
25
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20
15
10
5
0
0 25 50 75 100 125 150
CASE TEMPERATURE (°C)
300
250
200
150
100
50
0
0.02
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load
C30T04QH/C30T04QH-11A
0.02s
0.05
I FSM
0.1 0.2
TIME (s)
0.5 1
2
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet C30T04QH-11A.PDF ] | |
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