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Datasheet GP2Y1010AU Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GP2Y1010AU | COMPACT DUST SENSOR GP2Y1010AU
GP2Y1010AU
s Features
1. Compact, thin type (46×30×17.6mm) 2. Low dissipation current (ICC:MAX. 20mA) 3. Single-shot detection of house dust
Compact Dust Sensor for Air Conditioners
s Outline Dimensions
46 2
(Unit : mm)
2 2 30 2 (2.8)
1. Air conditioners 2. Air cleaner
14.3
s Appl |  Sharp Microelectronics | sensor |
| 2 | GP2Y1010AU0F | Compact Optical Dust Sensor GP2Y1010AU0F
GP2Y1010AU0F
Compact Optical Dust Sensor
■ Description
GP2Y1010AU0F is a dust sensor by optical sensing system. An infrared emitting diode (IRED) and an phototransistor are diagonally arranged into this device. It detects the reflected light of dust in air. Especially, it is effect | Sharp Microelectronics | sensor |
GP2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GP20 | Paperless Recorder <  Yokogawa data | | |
| 2 | GP200 | PPTC Thermistors GPxxx Series PPTC Thermistors (PPTC Resettable Fuses)
Shenzhen Goodpoly Electron Co., Ltd.
¡÷ ¡÷ ¡÷
Radial leaded devices Very high voltage surge capabilities Available in lead-free version
¡÷
Agency Recognition: UL¡¢
TUV
Electrical Characteristics
Model GP070 GP100 GP120 GP-CW120 GP  Goodpoly thermistor | | |
| 3 | GP2001-7R | 120...195 Watt DC-DC Converters P Series
120...195 Watt DC-DC Converters
Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3...96 V DC 4242V DC I/O electric strength test voltage
LGA
• Extremely slim case (4 TE), fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range –40..  Power-One converter | | |
| 4 | GP200MHS12 | Half Bridge IGBT Module GP200MHS12
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7  Dynex Semiconductor igbt | | |
| 5 | GP200MHS18 | Half Bridge IGBT Module GP200MHS18
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
FEATURES
s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 200A 400A
APPLICATIONS
s s s s
High Dynex Semiconductor igbt | | |
| 6 | GP200MKS12 | IGBT Chopper Module Preliminary Information GP200MLK12
GP200MKS12
IGBT Chopper Module Preliminary Information
DS5448-1.2 April 2001
FEATURES
s s s s
Internally Configured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(P Dynex Semiconductor igbt | | |
| 7 | GP200MLS12 | IGBT Chopper Module Preliminary Information GP200MLS12
GP200MLS12
IGBT Chopper Module Preliminary Information
DS5421-1.5 April 2001
FEATURES
s s s s
Internally Configured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(P Dynex Semiconductor igbt | |
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