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HL7851G PDF даташит

Спецификация HL7851G изготовлена ​​​​«Opnext» и имеет функцию, называемую «GaAlAs Laser Diode».

Детали детали

Номер произв HL7851G
Описание GaAlAs Laser Diode
Производители Opnext
логотип Opnext логотип 

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HL7851G Даташит, Описание, Даташиты
HL7851G
GaAlAs Laser Diode
ODE-208-062A (Z)
Rev.1
Dec. 04, 2006
Description
The HL7851G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic
sealing of the package assures high reliability.
Features
Visible light output: λp = 785 nm Typ
Small beam ellipticity: 9.5:23
www.DataSheeHti4gUh o.cuotpmut power: 50 mW (CW)
Built-in monitor photodiode
Package Type
HL7851G: G2
Internal Circuit
13
PD LD
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power
LD reverse voltage
PO(pulse)
VR(LD)
PD reverse voltage
Operating temperature
VR(PD)
Topr
Storage temperature
Tstg
Note: Maximum 50% duty cycle, maximum 1 µs pulse width.
Ratings
50
60 *
2
30
–10 to +60
–40 to +85
2
(TC = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
Item
Threshold current
Slope efficiency
LD Operating current
LD Operating voltage
Lasing wavelength
Beam divergence (parallel)
Beam divergence
(perpendicular)
Monitor current
Astigmatism
Symbol
Ith
ηs
IOP
VOP
λp
θ//
θ⊥
IS
AS
Min
0.35
775
8
18
30
Typ
45
0.55
135
2.3
785
9.5
23
45
5
Max
70
0.7
165
2.7
795
12
28
150
Unit
mA
mW/mA
mA
V
nm
°
°
(TC = 25°C)
Test Conditions
40 (mW) / (I(45mW) – I(5mW))
PO = 50 mW
PO = 50 mW
PO = 50 mW
PO = 50 mW, FWHM
PO = 50 mW, FWHM
µA PO = 5 mW, VR(PD) = 5 V
µm PO = 5 mW, NA = 0.4
Rev.1 Dec. 04, 2006 page 1 of 4









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HL7851G Даташит, Описание, Даташиты
HL7851G
Typical Characteristic Curves
Optical Output Power vs. Forward Current
60
50 TC = 0°C 25°C
40 60°C
30
20
10
0
0
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40 80 120 160
Forward current, IF (mA)
200
Slope Efficiency vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
0
0 10 20 30 40 50 60
Case temperature, TC (°C)
Threshold Current vs. Case Temperature
100
50
30
20
10
0 10 20 30 40 50 60
Case temperature, TC (°C)
Monitor Current vs. Case Temprature
100
PO = 5 mW
VR(PD) = 5 V
80
60
40
20
0
0 10 20 30 40 50 60
Case temperature, TC (°C)
Lasing Wavelength vs. Case Temperature
800
PO = 50 mW
795
790
785
780
775
0
10 20 30 40 50 60
Case temperature, TC (°C)
Rev.1 Dec. 04, 2006 page 2 of 4
Far Field Pattern
1.0
PO = 50 mW
0.8 TC = 25°C
Perpendicular
0.6
Parallel
0.4
0.2
0
-40 -30 -20 -10 0 10 20 30 40
Angle, θ ( ° )









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HL7851G Даташит, Описание, Даташиты
HL7851G
Package Dimensions
Unit: mm
www.DataSheet4U.com
φ
9.0
+0
–0.025
1.0 ± 0.1
(0.65)
φ
7.2
+0.3
–0.2
φ 6.2 ± 0.2
(φ2.0)
Emitting Point
3 – φ 0.45 ± 0.1
123
1
2
3
φ 2.54 ± 0.35
OPJ Code
JEDEC
JEITA
Mass (reference value)
LD/G2
1.1 g
Rev.1 Dec. 04, 2006 page 3 of 4










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Номер в каталогеОписаниеПроизводители
HL7851GGaAlAs Laser DiodeHitachi Semiconductor
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HL7851GGaAlAs Laser DiodeOpnext
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