WTC2302 PDF даташит
Спецификация WTC2302 изготовлена «Weitron Technology» и имеет функцию, называемую «Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | WTC2302 |
Описание | Enhancement Mode Power MOSFET |
Производители | Weitron Technology |
логотип |
6 Pages
No Preview Available ! |
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
*Super High Dense Cell Design For Low R DS(ON)
RDS(ON) <60m Ω@VGS =4.5V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
3 DRAIN
2
SOURCE
WTC2302
DRAIN CURRENT
2.3 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 3
(TA
VGS
ID
Pulsed Drain Current 1, 2
IDM
Total Power Dissipation (TA=25°C )
Maximum Junction-ambient3
PD
R θJA
Operating Junction and Storage Temperature Range
TJ , Ts tg
Value
20
±8
2.3
8
0.9
145
-55~+150
Unit
V
A
A
W
°C /W
°C
wwDwe.DvatiacSheeetM4U.caomrking
WTC2302 = N02
WEITRON
http://www.weitron.com.tw
1/6
Rev.B 24-Aug-09
No Preview Available ! |
WTC2302
Electrical Characteristics (TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VGS=0,ID=-10μA
Gate-Source Threshold Voltage
VDS=VGS,ID=250μA
Gate-Source Leakage Current
VGS= ±8V
Drain-Source Leakage Current(Tj=25℃)
VDS=9.6V,VGS=0
Drain-Source On-Resistance
VGS=4.5V,ID=2.8A
VGS=2.5V,ID=2.0A
Forward Transconductance
VDS=5 V,ID=4.0A
V(BR)DSS 20
-
-
V
VGS(Th)
0.6
-
1.2
IGSS
-
-
±100
nA
IDSS
-
-
-1 μA
RDS(on)
gfs
-
-
-
40 60
50 115
6.5 -
mΩ
S
Dynamic
Input Capacitance
VGS=0V,VDS=6V,f=1.0MHz
Output Capacitance
VGS=0V,VDS=6V,f=1.0MHz
Reverse Transfer Capacitance
VGS=0V,VDS=6V,f=1.0MHz
www.DataSheet4U.com
Ciss
Coss
Crss
- 427.12 -
- 80.56 -
- 57 -
pF
WEITRON
http://www.weitron.com.tw
2/6
Rev.B 24-Aug-09
No Preview Available ! |
WTC2302
Switching
Turn-on Delay Time2
VDD=6V,VGEN =4.5V,ID =1.0A,RL =6Ω,RG=6Ω
Rise Time
VDD=6V,VGEN =4.5V,ID =1.0A,RL =6Ω,RG=6Ω
Turn-off Delay Time
VDD=6V,VGEN =4.5V,ID =1.0A,RL =6Ω,RG=6Ω
Fall Time
VDD=6V,VGEN =4.5V,ID =1.0A,RL =6Ω,RG=6Ω
Total Gate Charge2
VDS=6V,VGS=4.5V,ID=2.8A
Gate-Source Charge
VDS=6V,VGS=4.5V,ID=2.8A
Gate-Drain Change
VDS=6V,VGS=4.5V,ID=2.8A
td(on)
-
tr -
td (off)
-
tf -
Qg -
Qgs -
Qgd -
6.16
7.56
16.61
4.07
3.69
0.7
1.06
-
-
-
-
-
-
-
ns
nC
Source-Drain Diode Characteristics
Forward On Voltage2
VGS=0V,IS=-1.6A
VSD -
Continuous Source Current(Body Diode)
IS -
- 1.2 V
- 1.6 A
Note: 1. Pulse width limited by Max, junction temperature.
2. pulse width≦300μs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
www.DataSheet4U.com
WEITRON
http://www.weitron.com.tw
3/6
Rev.B 24-Aug-09
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