WTC2306 PDF даташит
Спецификация WTC2306 изготовлена «Weitron Technology» и имеет функцию, называемую «Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | WTC2306 |
Описание | Enhancement Mode Power MOSFET |
Производители | Weitron Technology |
логотип |
4 Pages
No Preview Available ! |
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
* Super High Dense Cell Design For Low RDS(on)
RDS(on) < 38mΩ @ VGS = 10V
* Rugged and Reliable
* Simple Drive Requirement
* SOT-23 Package
Applications:
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System
3 DRAIN
2
SOURCE
WTC2306
DRAIN CURRENT
5.8 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
1
2
3
SOT-23
Maximum Ratings (TA
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Symbol
VDS
VGS
ID
IDM
Value
30
±12
5.8
30
Total Power Dissipation (TA=25°C)
Maximum Junction-Ambient2
Operating Junction Temperature Range
PD
RθJA
TJ
1.4
140
-55~+150
Storage Temperature Range
Tstg -55~+150
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
www.Dat23aS.. h1Ge-ueinta42rUa2.ncootzmeCedu
PCB board
by design;
not
subject
to
production
testing
Unit
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTC2306 = N06
WEITRON
http://www.weitron.com.tw
1/4
Rev.B 17-Aug-09
No Preview Available ! |
WTC2306
Electrical Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic
Symbol Min
Typ Max
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=250µA
Gate-Source Threshold Voltage
VDS=VGS, ID=250µA
Gate-Source Leakage Current
VDS=0V, VGS=-+12V
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
Drain-Source On-Resistance
VGS=2.5V ,ID=4.0A
VGS=4.5V ,ID=5.0A
VGS=10V , ID=5.8A
Gate Resistance
VGS=0V, VDS=0V, f=1HMz
Forward Transconductance
VDS=5V, ID=5A
V(BR)DSS
VGS (th)
IGSS
IDSS
RDS(on)
Rg
gfs
30
0.7
-
-
-
-
-
6
10
--
- 1.4
- ±100
-1
45 62
34 43
31 38
7 7.5
15 -
Unit
V
V
nA
µA
mΩ
Ω
S
Switching
Turn-On Delay Time(2)
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
Rise Time
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
Turn-O Time
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
Fall Time
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
Total Gate Charge(2)
VDS=15V, ID=5.8A,VGS=4.5V
td(on)
tr
t)
tf
Qg
Gate-Source Charge
VDS=15V, ID=5.8A,VGS=4.5V
Gate-Drain Charge
VDS=15V, ID=5.8A,VGS=4.5V
Drain-Source Diode Forward Voltage(2)
wwVwG.SD=a0tVa,SIhS=ee1t.04UA .com
Continuous Source Current (Body Diode)
Qgs
Qgd
VSD
IS
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
-
-
-
-
-
-
-
-
-
7 14
15 30
38 76
36
11 14.3
1.6 2.08
2.8 3.64
- 1.2
- 2.5
nS
nS
nS
nS
nc
nc
nc
V
A
WEITRON
http://www.weitron.com.tw
2/4
Rev.B 17-Aug-09
No Preview Available ! |
WTC2306
TYPICAL ELECTRICAL CHARACTERISTICS
www.DataSheet4U.com
WEITRON
http://www.weitron.com.tw
3/4
Rev.B 17-Aug-09
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