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WTC2308 PDF даташит

Спецификация WTC2308 изготовлена ​​​​«Weitron Technology» и имеет функцию, называемую «Enhancement Mode Power MOSFET».

Детали детали

Номер произв WTC2308
Описание Enhancement Mode Power MOSFET
Производители Weitron Technology
логотип Weitron Technology логотип 

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WTC2308 Даташит, Описание, Даташиты
N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:www.DataSheet4U.com
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <160 mΩ@V GS =10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2308
DRAIN CURRENT
3 AMPERES
DRAIN SOURCE VOLTAGE
60 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 3 ,(TA
Pulsed Drain Current 1,2
,(TA
VGS
ID
IDM
Total Power Dissipation(TA =25˚C)
Maximum Thermal Resistance Junction-ambient 3
PD
R JA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
60
±20
3.0
2.3
10
1.38
90
-55~+150
Unit
V
A
W
℃/W
Device Marking
WTC2308=2308
WEITRON
http:www.weitron.com.tw
1/6
24-May-05









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WTC2308 Даташит, Описание, Даташиты
WTC2308
Electrical Characteristics (TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
www.DataSVhGeSe=t40U,.IcDom=250μA
Gate-Source Threshold Voltage
VDS =VG S , ID=250μA
Gate-Source Leakage Current
VGS= ±20V
Drain- Source Leakage Current(Tj=25˚C)
VD S =60V,VG S =0
Drain- Source Leakage Current(Tj=70˚C)
VD S =48V,VG S =0
Drain-Source On-Resistance
VG S =10V,ID =2A
VG S =4.5V,ID =1.7A
Forward Transconductance
VDS=5 V,ID=3 A
V(BR)DSS 60
-
-
V
VGS(Th)
1.0
-
3.0
IGSS
-
-
±100
nA
IDSS
-
-
- 10
μA
- 25
RDS(on)
gfs
-
-
-
- 160 mΩ
- 220
5.0 -
S
Dynamic
Input Capacitance
VG S =0V, VDS =25V,f=1.0MHz
Output Capacitance
VG S =0V, VDS =25V,f=1.0MHz
Reverse Transf er Capacitanc e
VG S =0V, VDS =25V,f=1.0MHz
Ciss - 490 780
Coss
-
55
-
pF
Crss
-
40
-
WEITRON
http:www.weitron.com.tw
2/6
24-May-05









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WTC2308 Даташит, Описание, Даташиты
WTC2308
Switching
Turn-on Delay Time 2
VDS=30V,VGS=10V,ID=1A,RD=30Ω ,RG=3.3Ω
Rise Time
VDS=30V,VGS=10V,ID=1A,RD=30Ω ,RG=3.3Ω
Turn-off De lay Time
www.DataSVhDeSe=t43U0.cVo,mVGS=10V,ID=1A,RD=30Ω ,RG=3.3Ω
Fall Time
VDS=30V,VGS=10V,ID=1A,RD=30Ω ,RG=3.3Ω
Total Gate Charge 2
VDS =48V,VG S =4.5V, ID=3A
Gate-Source Charge
VDS =48V,VG S =4.5V, ID=3A
Gate-Drain Change
VDS =48V,VG S =4.5V, ID=3A
td(on)
-
tr -
td (off)
-
tf -
Qg -
Qgs -
Qgd -
6-
5-
ns
16 -
3-
6 10
1.6 -
nC
3-
Source-Drain Diode Characteristics
Forward On Voltage 2
VGS =0V,IS=1.2A
VSD -
- 1.2 V
Reverse Recovery Time
VGS=0V,IS=3A,dl/dt=100A/μs
Trr - 25 - ns
Reverse Recovery Charge
VGS=0V,IS=3A,dl/dt=100A/μs
Qrr - 26 - nC
Note: 1. Pulse width limited by max, junction temperature.
2. pulse width300μs, duty cycle2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
WEITRON
http://www.weitron.com.tw
3/6
24-May-05










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