WTC2309 PDF даташит
Спецификация WTC2309 изготовлена «Weitron Technology» и имеет функцию, называемую «Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | WTC2309 |
Описание | Enhancement Mode Power MOSFET |
Производители | Weitron Technology |
логотип |
6 Pages
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P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
www.DataSheet4U.com
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <75m Ω@V GS =-10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2309
DRAIN CURRENT
-3.7 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 3 ,(TA=25˚C)
,(TA=70˚C)
VG S
ID
Pulsed Drain Current 1,2
Total Power Dissipation(TA=25˚C)
Maximum Thermal Resistance Junction-ambient 3
Operating Junction and Storage Temperature Range
IDM
PD
R θJA
TJ, Tstg
Value
-30
±20
-3.7
-3.0
-12
1.38
90
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTC2309=2309
WEITRON
http:www.weitron.com.tw
1/6
23-May-05
No Preview Available ! |
WTC2309
Electrical Characteristics (TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
www.DataSVhGeSe=t40U,.cIoDm=-250μA
Gate-Source Threshold Voltage
VDS=VGS,ID=-250 μA
Gate-Source Leakage Current
VGS= ±20V
Drain- Sou rce Leakage Current(Tj=25˚C)
VDS=-30V,VGS =0
Drain- Sou rce Leakage Current(Tj=55˚C)
VDS=-24V,VGS =0
Drain-Source On-Resistance 2
VGS=-10V,I D=-3.0A
VGS=-4.5V,I D=-2.6A
Forward Transconductance
VDS=-10V, ID=-3A
V(BR)DSS -30
VG S(Th)
-1.0
IGSS
-
IDSS
-
-
-
-
-
-
-
-
V
-3.0
±100
nA
-1
μA
-25
RDS(o n)
gfs
-
-
-
- 75 mΩ
- 120
5.0 -
S
Dynamic
Input Capacitance
VG S =0 V, VDS =-25V,f=1.0MHz
Output Capacitance
VG S =0 V, VDS =-25V,f=1.0MHz
Reverse Transfer Capacitance
VG S =0 V, VDS =-25V,f=1.0MHz
C iss
C oss
C rss
-
-
-
412 660
91 -
62 -
pF
WEITRON
http:www.weitron.com.tw
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WTC2309
Switching
Turn-on Delay Time 2
VDS=-15V,VGS =-10V,I D=-1A,R D=15Ω ,R G=3.3Ω
Rise Time
VDS=-15V,VGS =-10V,I D=-1A,R D=15Ω ,R G=3.3Ω
Turn-off De lay Time
www.DataSVhDeS=et4-1U5.cVo,mVGS =-10V,I D=-1A,R D=15Ω ,R G=3.3Ω
Fall Time
VDS=-15V,VGS =-10V,I D=-1A,R D=15Ω ,R G=3.3Ω
Total Gate Charge 2
VDS=-24V,VGS =-4.5V,ID=-3A
Gate-Source C harge
VDS=-24V,VGS =-4.5V,ID=-3A
Gate-Drain C hange
VDS=-24V,VGS =-4.5V,ID=-3A
t d (on)
-
8
-
tr - 5
-
td (off )
-
20
-
ns
tf - 7
-
Qg -
Qgs -
5
1
8
- nC
Qgd -
3
-
Source-Drain Diode Characteristics
Forward On Voltage 2
VGS =0V,IS=-1.2A
VSD -
-
- 1.2
V
Reverse Recovery Time2
VGS =0V,IS=-3.0A,dl/dt=100A/µs
Trr -
20 -
ns
Reverse Recovery Charge
VGS =0V,IS=-3.0A,dl/dt=100A/µs
Q rr -
15 -
nC
Note: 1. Pulse width limited by Max, junction temperature.
2. pulse width≦300μs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
WEITRON
http:www.weitron.com.tw
3/6
23-May-05
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