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Datasheet 60N03L-10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 60N03L-10 | ST60N03L-10 STB60N03L-10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMIRARY DATA TYPE STB60N03L-10
s s s s s s s s
V DSS 30 V
R DS(on) < 0.01 Ω
ID 60 A
s
s
TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW |  STMicroelectronics | data |
60N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 60N03 | Power MOSFET, Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications
• Power Supplies • Converters • Pow  Tuofeng Semiconductor mosfet | | |
| 2 | 60N03 | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
AF60N03
Features
- Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product
Product Summary
BVDSS (V) 30
RDS(ON) (mΩ) 12
ID (A) 45
General Description
The advanced power MOSFET provides the designe  Anachip mosfet | | |
| 3 | 60N03 | N-Ch 30V Fast Switching MOSFETs CMD60N03/CMU60N03
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The 60N03 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchron  Cmos mosfet | | |
| 4 | 60N035 | N-Channel Field Effect Transistor Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotiv  ETC transistor | | |
| 5 | 60N03GP | AP60N03GP AP60N03GS/P
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 13.5mΩ 55A
▼ Simple Drive Requirement
G S
Description
The Advanced Power MOSFETs from APEC provid  Advanced Power Electronics data | | |
| 6 | 60N03L-10 | ST60N03L-10 STB60N03L-10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMIRARY DATA TYPE STB60N03L-10
s s s s s s s s
V DSS 30 V
R DS(on) < 0.01 Ω
ID 60 A
s
s
TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW STMicroelectronics data | | |
| 7 | 60N03S | AP60N03S AP60N03S
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
GD S
30V 13.5mΩ 55A
▼ Simple Drive Requirement
TO-263
Description
The Advanced Power MOSFETs from APEC provide the designer with t Advanced Power Electronics data | |
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