C5855 PDF даташит
Спецификация C5855 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SC5855». |
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Детали детали
Номер произв | C5855 |
Описание | NPN Transistor - 2SC5855 |
Производители | Toshiba Semiconductor |
логотип |
5 Pages
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2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
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High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1500 V
: VCE (sat) = 3 V (max)
: tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1500
700
5
10
20
5
50
150
−55~150
UNIT
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current
Emitter Cut−off Current
Collector − Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 6 A
VCE = 5 V, IC = 8 A
IC = 8 A, IB = 2 A
IC = 8 A, IB = 2 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 6 , IB1 (end) = 0.8 A
fH = 32 kHz
ICP = 5.5 A, IB1 (end) = 0.8 A
fH = 80 kHz
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
700 ―
―
V
28 ― 60
6.2 ― 10 ―
4.3 ― 6.7
――
3
V
― 1.0 1.4
V
― 2 ― MHz
― 120 ―
pF
― 2.8 ―
― 0.2 ―
µs
― 2.3 ―
― 0.1 ―
µs
1 2004-5-18
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IC – VCE
10
2.5
1.0 1.2
1.4 1.6 1.8
2.0
8
6
4
0.8
0.6
0.4
IB = 0.2 A
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2
0
0
Common emitter
Tc = 25℃
2 4 6 8 10
Collector-emitter voltage VCE (V)
100
Tc = 100°C
hFE – IC
25
−25
10
Common emitter
VCE = 5 V
1
0.01
0.1
1
Collector current IC (A)
10
10
Common emitter
VCE = 5 V
8
IC – VBE
6
Tc = 100°C
4
−25
2
25
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
2
2SC5855
2004-5-18
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VCE – IB
10
Common emitter
Tc = −25℃
8
6
56
7
Ic = 8 A
4
2
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0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base current IB (A)
VCE – IB
10
Common emitter
Tc = 25℃
8
6
56
7
Ic = 8 A
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base current IB (A)
2SC5855
10
1
8
0.1
VCE(sat) – IC
10 6 Common emitter
Tc = −25℃
IC/IB = 4
0.01
1
10
Collector current IC (A)
100
VCE (sat) – IC
10
Common emitter
10 6 Tc = 25℃
1
8
0.1
IC/IB = 4
0.01
1
10
Collector current IC (A)
100
VCE – IB
10
Common emitter
Tc = 100℃
8
6
56
7
Ic = 8 A
4
2
VCE (sat) – IC
10
Common emitter
10 6 Tc = 100℃
1
8
0.1
IC/IB = 4
0
0
0.4 0.8
1.2 1.6
2.0 2.4
Base current IC (A)
3
0.01
1
10
Collector current IC (A)
100
2004-5-18
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Номер в каталоге | Описание | Производители |
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