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Datasheet C547 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C547 | NPN Transistor, 2SC547 |  Toshiba | data |
| 2 | C5476 | NPN Transistor, 2SC5476 |  Sanyo Electric | data |
| 3 | C5478 | NPN Transistor, 2SC5478 Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
|  Sanyo Semicon Device | data |
C54 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C5404 | NPN Transistor, 2SC5404 Toshiba Semiconductor data | | |
| 2 | C5407 | NPN Transistor, 2SC5407 Power Transistors
2SC5407
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C)
Ratings 1700  Panasonic data | | |
| 3 | C5411 | NPN Transistor, 2SC5411 2SC5411
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5411
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
l High Voltage
: VCBO = 1500 V
l Low Saturation Voltage : VCE (sat) = 3 V (Max.)
l High Speed
: tf = 0.15 µs Toshiba Semiconductor data | | |
| 4 | C5416 | NPN Transistor, 2SC5416 Ordering number : EN5696
NPN Triple Diffused Planar Silicon Transistor
2SC5416
Inverter Lighting Applications
Features
• High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.
Package Dimensions
unit: mm 2079B-TO220FI (LS)
[2SC5416]
10.0 3.2
4.5  Sanyo data | | |
| 5 | C5417 | NPN Transistor, 2SC5417 2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4517 2SC4517A Unit
Symbol  Sanken electric data | | |
| 6 | C5418 | NPN Transistor, 2SC5418 Power Transistors
2SC5418
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Abso  Panasonic Semiconductor data | | |
| 7 | C5422 | NPN Transistor, 2SC5422 2SC5422
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5422
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mm Toshiba Semiconductor data | |
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