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S0402MH PDF даташит

Спецификация S0402MH изготовлена ​​​​«ST Microelectronics» и имеет функцию, называемую «Sensitive Gate SCR».

Детали детали

Номер произв S0402MH
Описание Sensitive Gate SCR
Производители ST Microelectronics
логотип ST Microelectronics логотип 

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S0402MH Даташит, Описание, Даташиты
® S0402xH
SENSITIVE GATE SCR
FEATURES
www.DataSheet4U.coITm(RMS) = 4A
VDRM = 200V to 800V
Low IGT < 200 µA
DESCRIPTION
The S0402xH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required.
K
A
G
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RM S)
IT( AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
Tc= 110°C
Mean on-state current
(180° conduction angle)
Tc= 110°C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 10 mA diG /dt = 0.1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
4
2.5
55
50
12.5
100
- 40, + 150
- 40, + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C RGK = 1K
Voltage
Unit
B DMN
200 400 600 800 V
January 1995
1/5









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S0402MH Даташит, Описание, Даташиты
S0402xH
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient
Rth(j-c) Junction to case for DC
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.5 W PGM = 5 W (tp = 20 µs) IGM = 2 A (tp = 20 µs)
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
VRGM
tgd
IH
IL
VTM
IDRM
IRRM
dV/dt
tq
VD=12V (DC) RL=140
Tj= 25°C MAX
VD=12V (DC) RL=140
Tj= 25°C MAX
VD=VDRM RL=3.3k
RGK = 1 K
Tj= 125°C MIN
IRG =10µA
Tj= 25°C MIN
VD=VDRM ITM= 3 x IT(AV)
Tj= 25°C TYP
dIG/dt = 0.1A/µs IG = 10mA
IT= 50mA RGK = 1 K
Tj= 25°C MAX
IG=1mA RGK = 1 K
Tj= 25°C MAX
ITM= 8A tp= 380µs
Tj= 25°C MAX
VD = VDRM RGK = 1 K
VR = VRRM
Tj= 25°C MAX
Tj= 110°C MAX
VD=67%VDRM RGK = 1 KTj= 110°C TYP
ITM= 3 x IT(AV) VR=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
VD= 67%VDRM RGK = 1 K
Tj= 110°C MAX
Value
60
4
Unit
°C/W
°C/W
Sensitivity
02
200
1.5
0.1
8
0.5
10
20
1.6
5
500
10
100
Unit
µA
V
V
V
µs
mA
mA
V
µA
µA
V/µs
µs
ORDERING INFORMATION
S
SCR MESA GLASS
CURRENT
2/5
04 02 M
SENSITIVITY
®
H
PACKAGE :
H = TO220 Non-insulated
VOLTAGE









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S0402MH Даташит, Описание, Даташиты
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
S0402xH
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P (W)
3.5
360 O
3
2.5
www.DataSheet4U.c2om
1.5
1
0.5
0
0 0.5
1
DC
= 180o
= 120o
= 90o
= 60o
= 30o
IT(AV)(A)
1.5 2 2.5 3 3.5 4
P (W)
3.5
3
2.5
Rth = 0 o C/W
5o C/W
10 o C/W
15 o C/W
2
= 180o
1.5
1
0.5
0
0
Tamb (oC)
20 40 60
Tcase (oC)
-110
-115
-120
-125
80 100 120 140
Fig.3 : Average on-state current versus case tem-
perature.
I T(AV) (A)
5
4
DC
3
2 = 180o
1
Tcase (oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1 Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
10. 0
9.0
Ih[Tj]
Ih[Tj=25 o C]
8.0
7.0
6.0
5.0 Igt
4.0
3.0
2.0 Ih
1.0
0.0
-40 -20 0 20 40
60
80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
60
50
40
30
20
10
Number of cycles
0
1 10
Tj initial = 25oC
100 100 0
3/5
®










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S0402MHSensitive Gate SCRST Microelectronics
ST Microelectronics

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