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Datasheet S0402XH Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S0402xH | Sensitive Gate SCR ®
S0402xH
SENSITIVE GATE SCR
FEATURES
T(RMS)
I = 4A VDRM = 200V to 800V Low IGT < 200 µA
K A G
DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is |  ST Microelectronics | gate |
S04 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S04 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | S0402BH | Sensitive Gate SCR ®
S0402xH
SENSITIVE GATE SCR
FEATURES
T(RMS)
I = 4A VDRM = 200V to 800V Low IGT < 200 µA
K A G
DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is ST Microelectronics gate | | |
| 3 | S0402DH | Sensitive Gate SCR ®
S0402xH
SENSITIVE GATE SCR
FEATURES
T(RMS)
I = 4A VDRM = 200V to 800V Low IGT < 200 µA
K A G
DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is ST Microelectronics gate | | |
| 4 | S0402MH | Sensitive Gate SCR ®
S0402xH
SENSITIVE GATE SCR
FEATURES
T(RMS)
I = 4A VDRM = 200V to 800V Low IGT < 200 µA
K A G
DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is ST Microelectronics gate | | |
| 5 | S0402NH | Sensitive Gate SCR ®
S0402xH
SENSITIVE GATE SCR
FEATURES
T(RMS)
I = 4A VDRM = 200V to 800V Low IGT < 200 µA
K A G
DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is ST Microelectronics gate | | |
| 6 | S0402xH | Sensitive Gate SCR ®
S0402xH
SENSITIVE GATE SCR
FEATURES
T(RMS)
I = 4A VDRM = 200V to 800V Low IGT < 200 µA
K A G
DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is ST Microelectronics gate | | |
| 7 | S041P | FM IF AMplifier Siemens amplifier | |
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