C2688 PDF даташит
Спецификация C2688 изготовлена «Unisonic Technologies» и имеет функцию, называемую «NPN Transistor - 2SC2688». |
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Детали детали
Номер произв | C2688 |
Описание | NPN Transistor - 2SC2688 |
Производители | Unisonic Technologies |
логотип |
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UNISONIC TECHNOLOGIES CO., LTD
2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma
output circuits.
www.DataSheet4U.com
FEATURES
* High Electrostatic-Discharge-Resistance.
ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)
* Low Cre, High fT
Cre ≤3.0 pF (VCB=30V)
fT ≥50MHz (VCE=30V, IE=-10mA)
1
TO-126
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC2688-x-T60-A-K
2SC2688L-x-T60-A-K
Package
TO-126
*Pb-free plating product number: 2SC2688L
Pin Assignment
123
ECB
Packing
Bulk
2SC2688L-x-T60-A-K
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126
(4) x: refer to Classification of hFE
(5) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
300
V
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
300
5.0
V
V
Collector Current
Total Power Dissipation
Ta=25℃
TC=25℃
IC
PD
200
1.25
10
mA
W
W
Junction Temperature
TJ 150
℃
Storage Temperature
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TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
Collector Saturation Voltage
Collector Cutoff Current
VCE(SAT)
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
Gain Bandwidth Product
hFE
fT
Feedback Capacitance
Cre
Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2%
TEST CONDITIONS
IC=20mA, IB=5.0mA
VCB=200V, IE=0
VEB=5.0V, IC=0
VCE=10V, IC=10mA
VCE=30V, IE=-10mA
VCB=30V, IE=0, f=1.0MHz
MIN TYP MAX UNIT
1.5 V
100 nA
100 nA
40 80 250
50 80
MHz
3 pF
CLASSIFICATION OF hFE
Rank
Range
N
40 ~ 80
M
60 ~ 120
L
100 ~ 200
K
16 ~ 250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC2688
NPN EPITAXIAL SILICON TRANSISTOR
BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR
Open Collector
TEST CONDITION
1. E-B reverse bias
2.C=2300pF
SW.
T.U.T
3. Apply on shot pulse to T.U.T.
(Transistor Under the Test) by SW.
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VD
C=2 300pF
JUDGEMENT
Reject; BVEBO waveform defect
As a result if T.U.T. is not rejected,
apply higher voltage to capacitor and
test again.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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