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PDF C5196 Data sheet ( Hoja de datos )
| Número de pieza | C5196 | |
| Descripción | NPN Transistor - 2SC5196 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C5196 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5196
Power Amplifier Applications
2SC5196
Unit: mm
• Complementary to 2SA1939
• Suitable for use in 40-W high fidelity audio amplifier’s output stage
www.DataSheetA4Ub.csomolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
VCBO
VCEO
VEBO
IC
IB
PC
80 V
80 V
5V
6A
0.6 A
60 W
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-16C1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 4.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C5196.PDF ] | |
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