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HAT2129H PDF даташит

Спецификация HAT2129H изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2129H
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2129H Даташит, Описание, Даташиты
HAT2129H
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 7 V gate drive
Low drive current
www.DataSheet4U.cHoimgh density mounting
Low on-resistance
RDS(on) = 6 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
5
D
4
G
SSS
123
REJ03G0049-0500
Rev.5.00
Sep 20, 2005
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 3
EAR Note 3
Pch Note2
Tch
Tstg
Ratings
40
±20
30
120
30
20
32
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.5.00 Sep 20, 2005 page 1 of 7









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HAT2129H Даташит, Описание, Даташиты
HAT2129H
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
www.DataSheetO4Uu.tcpoumt capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
40
±20
2.0
24
Typ
6.0
7.0
40
3200
450
260
46
13.5
7.5
22
33
67
11
0.84
50
Max
±10
1
3.5
7.5
9.5
1.10
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 40 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 7 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 15 A,
VDD 10 V, RL = 0.67 ,
Rg = 4.7
IF = 30 A, VGS = 0 Note4
IF = 30 A, VGS = 0
diF/ dt = 50 A/ µs
Rev.5.00 Sep 20, 2005 page 2 of 7









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HAT2129H Даташит, Описание, Даташиты
HAT2129H
Main Characteristics
Power vs. Temperature Derating
40
30
20
www.DataSheet4U.com
10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50 4.8 V
10 V
40 7 V
Pulse Test
VGS = 4.6 V
30
4.2 V
20
10 3.8 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
ID = 15 A
100
10 A
50
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Sep 20, 2005 page 3 of 7
Maximum Safe Operation Area
1000
100
10
1 Operation in
DCPOWpe=ra11t0iommn1s0s01µ0sµs
this area is
limited by RDS(on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
-25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10 VGS = 7 V
5 10 V
2
1
1 3 10 30 100 300 1000
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
HAT2129HSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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