|
|
Número de pieza | HAT2165N | |
Descripción | Silicon N Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT2165N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! HAT2165N
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
www.DataSheet•4U.cCoampable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)
Outline
LFPAK-i
5678
DDDD
4
G
1(S)
2(S)
3(S)
4(G)
SSS
12 3
8(D)
7(D)
6(D)
5(D)
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Preliminary
Rev.0.01
Jul.15.2004
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
55
220
55
30
90
(30)
(4.17)
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.0.01, Jul.15.2004, page 1 of 6
1 page HAT2165N
www.DataSheet4U.com
Reverse Drain Current vs.
Source to Drain Voltage
100
80
10 V
5 V VGS = 0
60
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
I AP = 30 A
80 V DD = 15 V
duty < 0.1 %
Rg > 50 Ω
60
40 40
20
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
20
0
25 50 75 100 125 150
Channel Temperature Tch (˚C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L • IAP2 •
VDSS
VDSS - V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 10 V
Switching Time Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.0.01, Jul.15.2004, page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HAT2165N.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT2165H | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
HAT2165N | Silicon N Channel Power MOS FET Power Switching | Renesas Technology |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |