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HAT2187WP PDF даташит

Спецификация HAT2187WP изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2187WP
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2187WP Даташит, Описание, Даташиты
HAT2187WP
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G0535-0500
Rev.5.00
Sep.02,2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
17
34
17
34
17
19.2
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00, Sep.02,2005, page 1 of 6









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HAT2187WP Даташит, Описание, Даташиты
HAT2187WP
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
www.DataSheetR4Ue.vceormse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to Source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
200
3.0
8
Notes: 4. Pulse test
Typ
14
0.084
Max
1
±0.1
4.5
0.094
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 8.5 A, VDS = 10 V Note4
ID = 8.5 A, VGS = 10 VNote4
1200 — pF VDS = 25 V
220 — pF VGS = 0
19 — pF f = 1 MHz
31 — ns ID = 8.5 A
37 — ns VGS = 10 V
69 — ns RL = 11.8
8 — ns Rg = 10
26 — nC VDD = 160 V
7 — nC VGS = 10 V
10 — nC ID = 17 A
0.9 1.4 V IF = 17 A, VGS = 0 Note4
130 — ns IF = 17 A, VGS = 0
diF/dt = 100 A/µs
Rev.5.00, Sep.02,2005, page 2 of 6









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HAT2187WP Даташит, Описание, Даташиты
HAT2187WP
Main Characteristics
Power vs. Temperature Derating
40
30
20
www.DataSheet4U.com
10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
Pulse Test
7V
16
6V
12 5.75 V
8 5.5 V
5.25 V
4
VGS = 5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Pulse Test
3
2
ID = 17 A
1 8.5 A
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00, Sep.02,2005, page 3 of 6
Maximum Safe Operation Area
100
30
10
1 ms 10010µsµs
3
1
0.3 Operation in this
area is limited by
0.1 RDS(on) PW = 10 ms
0.03
(1shot)
0.01
0.003
0.001 Ta = 25°C
1 3 10
DC Operation
(Tc = 25°C)
30 100 300
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
4
Tc = 75°C
25°C
25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
0.01
1
Pulse Test
3 10 30 100 300 1000
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
HAT2187WPSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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