DataSheet26.com

74AHCT2G00 PDF даташит

Спецификация 74AHCT2G00 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «high-speed Si-gate CMOS device».

Детали детали

Номер произв 74AHCT2G00
Описание high-speed Si-gate CMOS device
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

17 Pages
scroll

No Preview Available !

74AHCT2G00 Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
DATA SHEET
www.DataSheet4U.com
74AHC2G00; 74AHCT2G00
2-input NAND gate
Product specification
2004 Jan 21









No Preview Available !

74AHCT2G00 Даташит, Описание, Даташиты
Philips Semiconductors
2-input NAND gate
Product specification
74AHC2G00; 74AHCT2G00
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
www.DataSheet4U.cCoDmM EIA/JESD22-C101 exceeds 500 V.
Low power dissipation
Balanced propagation delays
SOT505-2 and SOT765-1 package
Specified from 40 to +85 °C and 40 to +125 °C.
DESCRIPTION
The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS
device.
The 74AHC2G/AHCT2G00 provides the 2-input NAND
gate function.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CPD
propagation delay nA and nB to nY
input capacitance
power dissipation capacitance per
gate
CL = 15 pF; VCC = 5 V
CL = 50 pF; f = 1 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
TYPICAL
AHC2G
3.5
1.5
17
AHCT2G
3.6
1.5
18
UNIT
ns
pF
pF
2004 Jan 21
2









No Preview Available !

74AHCT2G00 Даташит, Описание, Даташиты
Philips Semiconductors
2-input NAND gate
Product specification
74AHC2G00; 74AHCT2G00
FUNCTION TABLE
See note 1.
www.DataSheet4U.com
nA
L
L
H
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
INPUT
nB
L
H
L
H
OUTPUT
nY
H
H
H
L
ORDERING INFORMATION
TYPE NUMBER
74AHC2G00DP
74AHCT2G00DP
74AHC2G00DC
74AHCT2G00DC
TEMPERATURE
RANGE
40 to +125 °C
40 to +125 °C
40 to +125 °C
40 to +125 °C
PINS
8
8
8
8
PACKAGE
PACKAGE MATERIAL CODE MARKING
TSSOP8
TSSOP8
VSSOP8
VSSOP8
plastic
plastic
plastic
plastic
SOT505-2
SOT505-2
SOT765-1
SOT765-1
A00
C00
A00
C00
PINNING
PIN
1
2
3
4
5
6
7
8
SYMBOL
1A
1B
2Y
GND
2A
2B
1Y
VCC
data input
data input
data output
ground (0 V)
data input
data input
data output
supply voltage
DESCRIPTION
2004 Jan 21
3










Скачать PDF:

[ 74AHCT2G00.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
74AHCT2G00high-speed Si-gate CMOS deviceNXP Semiconductors
NXP Semiconductors
74AHCT2G00-Q100Dual 2-input NAND gateNXP Semiconductors
NXP Semiconductors
74AHCT2G08Dual 2-input AND gateNXP Semiconductors
NXP Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск